Fracture toughness of single crystal silicon.

Hayashi, Kunio; Tsujimoto, Shinji; Okamoto, Yasunori; Nishikawa, Takao

doi:10.2472/jsms.40.405

Cited by 27 publications

(13 citation statements)

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“…Therefore, if the surface energy varies with the orientation of the crystal plane, the value of fracture toughness should also change with the orientation of the fractured planes (Gilman, 1960;Hayashi et al, 1991;Ebrahimi and Kalwani, 1999;Tanaka et al 2003).…”

Section: Introductionmentioning

confidence: 98%

Orientation dependence of fracture toughness measured by indentation methods and its relation to surface energy in single crystal silicon

et al. 2006

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Fracture toughness of silicon crystals has been investigated using indentation methods, and their surface energies have been calculated by molecular dynamics (MD). In order to determine the most preferential fracture plane at room temperature among the crystallographic planes containing the 001 , 110 and 111 directions, a conical indenter was forced into (001), (110) and (111) silicon wafers at room temperature. Dominant {110}, {111} and {110} cracks were introduced from the indents on (001), (011) and (111) wafers, respectively. Fracture occurs most easily along {110}, {111} and {110} planes among the crystallographic planes containing the 001 , 011 and 111 directions, respectively. A series of surface energies of those planes were calculated by MD to confirm the orientation dependence of fracture toughness. The surface energy of the {110} plane is the minimum of 1.50 Jm −2 among planes containing the 001 and 111 directions, respectively, and that of the {111} plane is the minimum of 1.19 Jm −2 among the planes containing the 011 direction. Fracture toughness of those planes was also derived from the calculated surface energies. It was shown that the K IC value of the {110} crack plane was the minimum among those for the planes containing the 001 and 111 directions, respectively, and that K IC value of the {111} crack plane was the minimum among those for the planes containing the 011 direction. These results are in good agreement with that obtained conical indentation.

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Section: Introductionmentioning

confidence: 98%

Orientation dependence of fracture toughness measured by indentation methods and its relation to surface energy in single crystal silicon

et al. 2006

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“…Fracture toughness for bulk silicon material was well studied by using the indentation fracture test and bending test. Vicker's indentation was applied in the indentation fracture method on the (100), (110) and (111) surfaces with the diagonal direction of various crystallographic orientations such as 〈100〉, 〈110〉, 〈111〉 8 and 〈112〉 9 . Four‐point bending tests for a notched silicon bar were conducted in the controlled surface flaw (CSF) test by applying the load on the opposite side of the notched surface.…”

Section: Introductionmentioning

confidence: 99%

Fracture toughness measurement of thin‐film silicon

Ando

Nakao

et al. 2005

Fatigue Fract Eng Mat Struct

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A B S T R A C T The fracture toughness of single-crystal silicon thin films oriented to (100) and (110) was investigated by tensile testing under both 100 and 110 loading conditions. The specimen was fabricated from a p-type Czochralski (CZ)-grown wafer and passed through a thermal process during the fabrication of the test device. The measured fracture toughness is dependent on the loading direction in the tensile test and independent of the specimen surface orientation. The test results were 1.94 MPa √ m in the 100 direction and 1.17MPa √ m in the 110 . In these tests, no longitudinal size effect on the fracture stress or fracture toughness was observed. The SEM photographs obtained from the fracture specimens after the tensile test show that the crack initiated from the notch tip and propagated straight in the across-the-width direction on the (110) or (111) cleavage plane.

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“…However, the orientation dependence of fracture toughness and its relation to the surface energy have not been fully clarified yet, although a few works have been made on this problem in silicon crystals. [4][5][6][7] In the present study, orientation dependence of fracture toughness of silicon crystals at room temperature has been studied by using indentation methods. In addition, the orientation dependence of their surface energy has been also calculated using molecular dynamics.…”

Section: Introductionmentioning

confidence: 99%

Fracture Toughness Evaluated by Indentation Methods and Its Relation to Surface Energy in Silicon Single Crystals

et al. 2003

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Fracture toughness of silicon crystals has been investigated by indentation methods, and their surface energy has been calculated using molecular dynamics (MD). When a conical indenter was forced into a (001) silicon wafer at room temperature, {110} cracks were mainly introduced from the indent, indicating that fracture occurs most easily along the {110} plane among the crystallographic planes of the h001i zone. To confirm this orientation dependence, surface energies for those planes were computed using molecular dynamics. The surface energy calculated exhibits the minimum value of 1.50 JÁm À2 at the {110} plane, and it increases up to 2.26 JÁm À2 at the {100} plane. Fracture toughness was derived from these computed surface energies, and it was shown that K IC value for the {110} crack plane was the minimum among those for the planes of the h001i zone. This result is in good agreement with that obtained by indentation fracture (IF) methods, although the absolute K IC values evaluated by the IF method were larger than those obtained by the calculation.

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Fracture toughness of single crystal silicon.

Cited by 27 publications

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Orientation dependence of fracture toughness measured by indentation methods and its relation to surface energy in single crystal silicon

Orientation dependence of fracture toughness measured by indentation methods and its relation to surface energy in single crystal silicon

Fracture toughness measurement of thin‐film silicon

Fracture Toughness Evaluated by Indentation Methods and Its Relation to Surface Energy in Silicon Single Crystals

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