Fracture strength of optical quality and black polycrystalline CVD diamonds

Ralchenko, V.G.; Pleuler, E.; Lu, Fan Xiu; Sovyk, D. N.; Bolshakov, A. P.; Guo, Shiju; Tang, Wenting; I.V.Gontar,; Khomich, А.А.; Zavedeev, E. V.; Konov, V. I.

doi:10.1016/j.diamond.2011.12.031

Cited by 52 publications

(16 citation statements)

References 23 publications

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“…using a textured CVD-diamond target [6] and a 20 keV D beam from the HELIS accelerator which delivers the beam with small angular and energy divergences. In Ref.…”

Section: Introductionmentioning

confidence: 99%

Orientation effect in the neutron yield in deuterated Pd target bombarded by deuterium ion beam

Dalkarov

Negodaev

Rusetskiĭ

et al. 2019

Phys. Rev. Accel. Beams

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At the ion accelerator HELIS at the LPI, the neutron yield is investigated from a deuteron-deuteron (DD) reaction in a deuterated Pd target, during an irradiation of its surface by a 20 keV deuterium (D) ion beam. The measurements of the neutron flux in the D beam direction are performed in dependence on the target angle β with respect to the D beam axis using a multichannel detector based on He 3 counters. A significant anisotropy in the neutron yield is observed, and it was higher by a factor of 2 at β ¼ 0 compared to that at β ¼ AE30°. The possible reasons for the anisotropy, including D ion channeling, are discussed. The orientation effect of increasing the relative probability of the DD reaction in Pd due to channeling was investigated by computer simulations using the BCM-2.0 code. The numerically obtained 20 keV D trajectories allow calculating the flux density of channeled D in dependence on the penetration depth and angle of incidence. The enhanced D flux density between crystal planes at a zero incident angle with respect to (200) Pd planes allows a qualitative explanation of the increase of the neutron yield in the DD reaction.

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“…using a textured CVD-diamond target [6] and a 20 keV D beam from the HELIS accelerator which delivers the beam with small angular and energy divergences. In Ref.…”

Section: Introductionmentioning

confidence: 99%

Orientation effect in the neutron yield in deuterated Pd target bombarded by deuterium ion beam

Dalkarov

Negodaev

Rusetskiĭ

et al. 2019

Phys. Rev. Accel. Beams

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show abstract

“…Meanwhile, vacancies, non-diamond carbon, and holes were inevitable present with competitive growth of diamond films under the relatively high growth rate of 8-10 m/h for DC arc plasma jet CVD. These impurities and defects mentioned above were mostly incorporated in defective or amorphous regions at the boundaries, which would induce the stress concentration and decrease the mechanical properties [19]. So the boundaries would act as a source of weakness, causing failure firstly during sand erosion.…”

Section: Resultsmentioning

confidence: 99%

Erosion difference of growth and nucleation sides of free-standing diamond films prepared by DC arc plasma jet CVD

Zhu

Chen

et al. 2015

Applied Surface Science

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“…It is now known that 'whiteness' and 'darkness' of diamond can be manipulated by suitably varying the deposition parameters. 10,13 Polycrystalline diamond (PCD) coatings grown by the microwave plasma enhanced chemical vapour deposition (MWPECVD) technique is used as window material for millimetre wave transmission in gyrotron tubes. Such material can be grown by the CVD technique into different grades like thermal grade, mechanical grade, optical grade, electronic grade.…”

Section: Introductionmentioning

confidence: 99%

Influence of growth conditions on microstructure and defects in diamond coatings grown by microwave plasma enhanced CVD

et al. 2015

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Diamond coatings were grown on SiO 2 /Si substrate under various process conditions by microwave plasma chemical vapour deposition (MPCVD) using CH 4 /H 2 gas mixture. In this paper, we present a microstructural study to elucidate on the growth mechanism and evolution of defects, viz., strain, dislocations, stacking faults, twins and non-diamond impurities in diamond coatings grown under different process conditions. Transmission electron microscopy (TEM), X-ray diffraction (XRD) and Raman spectroscopy were used to characterize the diamond coatings. It has been shown that our new approach of prolonged substrate pre-treatment under hydrogen plasma yielded a new growth sequence that the SiO 2 layer on the Si substrate was first reduced to yield Si layer of ∼150 nm thickness before diamond was allowed to grow under CH 4 -H 2 plasma, created subsequently. It has also been shown that Si and O as impurity from the substrate hinders the initial diamond growth to yield non-diamond phases. It is being suggested that the crystal defects like twins, stacking faults, dislocations in the diamond grains and dislocations in the intermediate Si layer are generated due to the development of non-uniform stresses during diamond growth at high temperature.

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Fracture strength of optical quality and black polycrystalline CVD diamonds

Cited by 52 publications

References 23 publications

Orientation effect in the neutron yield in deuterated Pd target bombarded by deuterium ion beam

Orientation effect in the neutron yield in deuterated Pd target bombarded by deuterium ion beam

Erosion difference of growth and nucleation sides of free-standing diamond films prepared by DC arc plasma jet CVD

Influence of growth conditions on microstructure and defects in diamond coatings grown by microwave plasma enhanced CVD

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