Fracture of silicon wafers

McLaughlin, J.C.; Willoughby, A. F. W.

doi:10.1016/0022-0248(87)90207-7

Cited by 39 publications

(18 citation statements)

References 15 publications

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“…As Fracture strength depends on the surface state of samples. Some groups using a specially designed testing jig free from edge effects have reported that fracture stress of a float-zone grown Si wafer normally prepared by chemical polishing was 3.7 GPa [26][27][28] at RT, whereas the fracture strength reached up to 8.8 GPa after the surface removal of 166 m [29], which is close to the ideal strength, 13.7 GPa. Here, fracture stress F is related to the critical crack length c and fracture toughness K IC as represented by the following equation:…”

Section: Fracture Toughnessmentioning

confidence: 96%

“…Indeed, surface treatments, such as chemical polishing, lapping, implantation and annealing in various environments, affect the fracture strength of Si [27][28][29]. By lapping with diamond paste or by surface coating with TiN thin film,  F decreases to ~0.5 GPa, while by annealing in hydrogen or oxygen ambient or by ion-implantation,  F is enhanced to ~3…”

Section: Fracture Toughnessmentioning

confidence: 99%

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An overview of plasticity of Si crystals governed by dislocation motion

Yonenaga

2015

Engineering Fracture Mechanics

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Section: Fracture Toughnessmentioning

confidence: 96%

Section: Fracture Toughnessmentioning

confidence: 99%

An overview of plasticity of Si crystals governed by dislocation motion

Yonenaga

2015

Engineering Fracture Mechanics

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“…Over the past 60 years, the fracture strength of SCS has been extensively investigated at multiple length scales, with studies ranging in scope from the strength of full-sized SCS wafers, [190][191][192][193] to the strength of diced SCS chips, [194][195][196] to the strength of micro-and nano-scale SCS components. 172,197 Interestingly enough, some of the earliest work in this area focused on measuring r f of SCS at the smaller end of the length-scale spectrum.…”

Section: Single-crystal Silicon Fracture Strengthmentioning

confidence: 99%

Fracture strength of micro- and nano-scale silicon components

DelRio

Cook

Boyce

2015

Applied Physics Reviews

103

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Silicon devices are ubiquitous in many micro- and nano-scale technological applications, most notably microelectronics and microelectromechanical systems (MEMS). Despite their widespread usage, however, issues related to uncertain mechanical reliability remain a major factor inhibiting the further advancement of device commercialization. In particular, reliability issues related to the fracture of MEMS components have become increasingly important given continued reductions in critical feature sizes coupled with recent escalations in both MEMS device actuation forces and harsh usage conditions. In this review, the fracture strength of micro- and nano-scale silicon components in the context of MEMS is considered. An overview of the crystal structure and elastic and fracture properties of both single-crystal silicon (SCS) and polycrystalline silicon (polysilicon) is presented. Experimental methods for the deposition of SCS and polysilicon films, fabrication of fracture-strength test components, and analysis of strength data are also summarized. SCS and polysilicon fracture strength results as a function of processing conditions, component size and geometry, and test temperature, environment, and loading rate are then surveyed and analyzed to form overarching processing-structure-property-performance relationships. Future studies are suggested to advance our current view of these relationships and their impacts on the manufacturing yield, device performance, and operational reliability of micro- and nano-scale silicon devices.

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“…Surface modification processes have been attempted to improve the fracture properties of SCS structures by annealing in a hydrogen environment 47,48 or by transient laser annealing 49 . However, careful comparison should be made because such annealing induces changes in material conditions such as the DRIE process alteration, not just in the surface morphology.…”

Section: Comparison With Previous Specimensmentioning

confidence: 99%

Crystal orientation-dependent fatigue characteristics in micrometer-sized single-crystal silicon

Ikehara

Tsuchiya

2016

Microsyst Nanoeng

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Repetitive bending fatigue tests were performed using five types of single-crystal silicon specimens with different crystal orientations fabricated from {100} and {110} wafers. Fatigue lifetimes in a wide range between 10 0 and 10 10 were obtained using fan-shaped resonator test devices. Fracture surface observation via scanning electron microscope (SEM) revealed that the {111} plane was the primary fracture plane. The crack propagation exponent n was estimated to be 27, which was independent of the crystal orientation and dopant concentration; however, it was dependent on the surface conditions of the etched sidewall. The fatigue strengths relative to the deflection angle were orientation dependent, and the ratios of the factors obtained ranged from 0.86 to 1.25. The strength factors were compared with those obtained from finite element method stress analyses. The calculated stress distributions showed strong orientation dependence, which was well-explained by the elastic anisotropy. The comparison of the strength factors suggested that the first principal stress was a good criterion for fatigue fracture. We include comparisons with specimens tested in our previous report and address the tensile strength, initial crack length, volume effect, and effects of surface roughness such as scallops.

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Fracture of silicon wafers

Cited by 39 publications

References 15 publications

An overview of plasticity of Si crystals governed by dislocation motion

An overview of plasticity of Si crystals governed by dislocation motion

Fracture strength of micro- and nano-scale silicon components

Crystal orientation-dependent fatigue characteristics in micrometer-sized single-crystal silicon

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