2021
DOI: 10.1007/s10853-021-05924-z
|View full text |Cite
|
Sign up to set email alerts
|

Fracture mechanism of microporous Ag-sintered joint in a GaN power device with Ti/Ag and Ni/Ti/Ag metallization layer at different thermo-mechanical stresses

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
1
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 25 publications
(2 citation statements)
references
References 41 publications
0
1
0
Order By: Relevance
“…This includes the calculation of stress, strain, displacement, damage, and fatigue life, and the visualization of these quantities using contour plots, vector plots, and path plots [18].The FEA results are validated against experimental data to ensure the accuracy and reliability of the proposed material model and fracture criteria. The validation involves the comparison of the FEA results with the experimental data in terms of stress-strain curves, load-displacement curves, and fracture patterns [19]. The proposed FEA methodology provides a powerful tool for predicting and analyzing the fracture behavior and failure mechanisms of various engineering materials under different loading conditions.…”
Section: Post-processingmentioning
confidence: 99%
“…This includes the calculation of stress, strain, displacement, damage, and fatigue life, and the visualization of these quantities using contour plots, vector plots, and path plots [18].The FEA results are validated against experimental data to ensure the accuracy and reliability of the proposed material model and fracture criteria. The validation involves the comparison of the FEA results with the experimental data in terms of stress-strain curves, load-displacement curves, and fracture patterns [19]. The proposed FEA methodology provides a powerful tool for predicting and analyzing the fracture behavior and failure mechanisms of various engineering materials under different loading conditions.…”
Section: Post-processingmentioning
confidence: 99%
“…To date, various types of future devices, such as wearable devices, have been developed and demonstrated based on market needs. Silver particle-based pastes have also recently received considerable attention as die-attach materials for the fabrication of next-generation SiC- and GaN-based power devices 13 , 14 . The larger bandgaps of SiC- and GaN-based power semiconductor materials than the corresponding Si-based materials enable device operation above 200 °C, which could permit miniaturization of the power modules.…”
Section: Introductionmentioning
confidence: 99%