We report on magnetotransport measurements of multi-terminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transverse resistance plateaus are seen corresponding to fractional quantum Hall states, most strongly for ν = 1/3. By measuring the temperature dependence of these resistance minima, the energy gap for the 1/3 fractional state in graphene is determined to be at ∼20 K at 14 T.PACS numbers: 73.63.-b, 73.22.-f, 73.43.-f In the low magnetic field regime, the integer quantum Hall (IQH) effect of graphene is marked by an anomalous half-integer quantum Hall conductivity σ xy = g s (n + 1/2)e 2 /h, where n is an integer and g s = 4 is the Landau level (LL) degeneracy resulting from the degenerate spin and valley isospin degrees of freedom. This anomalous quantum Hall conductivity led to the observation of the filling factor sequence ν = ±2, ±6, ±10 [1, 2]. Subsequently, new broken-symmetry IQH states, corresponding to filling factors ν = 0, ±1, ±4 have been resolved in magnetic fields of B > 20 T, indicating the lifting of the fourfold degeneracy of the LLs [3,4]. These filling factors have been suggested to be the result of various novel correlated states mediated by electron-electron (e-e) interactions [5].In the strong quantum limit, e-e interactions in 2-dimensional electron gasses (2DEGs) can lead to the fractional quantum Hall (FQH) effect [6], many-body correlated states where the Hall conductance quantization appears at fractional filling factors. In recent investigations of transport properties in two-terminal high-mobility suspended graphene devices [7,8], a quantized conductance corresponding to the ν = 1/3 FQH state has been observed, suggesting the presence of strong e-e interactions in this system. However, due to the inherent mixing between longitudinal and transverse resistivities in this twoterminal measurement [9], quantitative characterization of the observed FQH states such as the FQH energy gap is only possible in an indirect way [10]. Although multiterminal measurements on suspended graphene samples have been reported previously [11,12], the mechanical [13] or thermal instability [14] of these samples has precluded even the observation of a fully-quantized IQH effect.Recently, the improvement of graphene mobility up to 8 m 2 /Vsec has been reported for substrate-supported graphene devices fabricated on a single-crystal hexagonal boron nitride substrates [15]. Multi-terminal transport measurements performed on such devices in magnetic fields up to 35 T reveal several FQH states whose filling factors are mostly integer multiples of 1/3. The energy gaps of these states have been measured for ν > 1, exhibiting an unusual hierarchy among these FQH states [16]. However, the characterization of FQH states with ν < 1, notably the 1/3 FQH state, could not be reliably conducted in these samples due to inhomogeneous broadening near the charge neutrality point. As str...