Fractional microwave-induced resistance oscillations

Дмитриев, И. А.; Mirlin, A. D.; Polyakov, D. G.

doi:10.1016/j.physe.2007.09.003

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…The results therefore suggest one new class of IQHE, as they provide insight into the origin of oscillatory variations in the Hall effect, and their evolution into Hall plateaus, in the low-B large-ν regime of the radiationinduced zero-resistance states in the photoexcited high mobility 2DES. [6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35,36,37,38,39,40,41,42,43,44,45,46,47,48,49] Transport studies of photo-excited two-dimensional electron systems have become a topic of interest following the discovery of novel radiation-induced zeroresistance states in the GaAs/AlGaAs system at high filling factors. [6,16] The characteristic field B f for these zero-resistance states and associated magneto-re...…”

Section: Introductionmentioning

confidence: 99%

Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect

et al. 2009

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We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, ν. At large-ν, the dark study indicates several distinct phase relations ("Type-1", "Type-2", and "Type-3") between the oscillatory diagonal-and Hall-resistances, as the canonical Integral Quantum Hall Effect (IQHE) is manifested in the "Type-1" case of approximately orthogonal diagonal-and Hall resistance-oscillations. Surprisingly, the investigation indicates quantum Hall plateaus also in the "Type-3" case characterized by approximately "anti-phase" Hall-and diagonal-resistance oscillations, suggesting a new class of IQHE.Transport studies under microwave photo-excitation exhibit radiation-induced magneto-resistance oscillations in both the diagonal, Rxx, and off-diagonal, Rxy, resistances. Further, when the radiation-induced magneto-resistance oscillations extend into the quantum Hall regime, there occurs a radiation-induced non-monotonic variation in the amplitude of Shubnikov-de Haas (SdH) oscillations in Rxx vs. B, and a non-monotonic variation in the width of the quantum Hall plateaus in Rxy. The latter effect leads into the vanishing of IQHE at the minima of the radiation-induced Rxx oscillations with increased photo-excitation. We reason that the mechanism which is responsible for producing the non-monotonic variation in the amplitude of SdH oscillations in Rxx under photoexcitation is also responsible for eliminating, under photo-excitation, the novel "Type-3" IQHE in the high mobility specimen. INTRODUCTIONA 2-dimensional electron system (2DES) at high magnetic fields, B, and low temperatures, T , exhibits the integral quantum Hall effect (IQHE), which is characterized by plateaus in the Hall resistance R xy vs. B, at R xy = h/ie 2 , with i = 1,2,3,... and concurrent vanishing diagonal resistance R xx as T → 0 K, in the vicinity of integral filling factors of Landau levels, i.e., ν ≈ i. [1,2,3] With the increase of the electron mobility, µ, at a given electron density, n, and low T , IQHE plateaus typically become narrower as fractional quantum Hall effects (FQHE) appear in the vicinity of, where p/q denotes mostly odd-denominator rational fractions. [2,3] Experimental studies of the highest mobility specimens have typically focused upon FQHE and other novel phases. [2,3,4,5] Meanwhile, the possibility of new variations of IQHE that might appear with the canonical effect in the reduceddisorder specimen, especially at large-ν, has been largely unanticipated. In the first dark-study part of this paper, we show that three distinct phase relationships can occur between the oscillatory diagonal-and Hall-resistances in the high-mobility dark specimen at ν > 5, and that IQHE can be manifested in two of these variations. The results therefore suggest one new class of IQHE, as they provide insight into the origin of oscillatory variations in the Hall effect, and their evolution into Hall plateaus, in the low-B large-ν regime of the radiationinduced zero-resistance sta...

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Section: Introductionmentioning

confidence: 99%

Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect

et al. 2009

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Nonequilibrium magnetooscillations in spatially non-uniform quantum Hall systems

Дмитриев¹

2011

J. Phys.: Conf. Ser.

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Abstract. A theory of nonequilibrium magnetotransport in high Landau levels of inhomogeneous quantum Hall systems is presented. A nonlinear current is calculated in response to given local gradients of the chemical and electrostatic potential in the presence of moderately strong microwave radiation. In the regime of high temperature, theory generalizes previously obtained results describing microwave-and Hall-induced oscillations of magnetoresistivity for the case of spatially non-uniform systems. Additionally, the regime of low temperatures is studied, where strong modification of Shubnikov-de Haas oscillations by the ac and dc fields is demonstrated. IntroductionOver the past decade, a family of fascinating nonequilibrium phenomena has been discovered in 2D electron gas (2DEG) including the microwave-induced (MIRO) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18], Hall-induced (HIRO) [19][20][21][22][23][24][25][26][27][28][29][30][31][32], and phonon-induced (PIRO) [33][34][35][36][37][38][39] resistance oscillations. Particularly interesting are the zero-resistance states (ZRS) [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56] which form in the minima of MIRO at sufficiently high microwave power. The magnetoresistivity in these structures is governed by spectral and spatial resonances set by the cyclotron frequency ω c = eB/mc and the cyclotron diameter R c = v F /ω c in various combinations with the parameters of the external fields. All these effects were observed in moderately strong transverse magnetic fields B e z where the dynamics of electrons remains essentially quasiclassical. At the same time, Landau quantization of the orbital motion can be pronounced and leads to the emergence of novel spectral and spatial resonances. This paper extends existing theories of these phenomena to include the case of spatial inhomogeneity as well as effects of strong dc and ac fields on Shubnikov-de Haas oscillations (SdHO).

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Fractional microwave-induced resistance oscillations

Cited by 2 publications

References 16 publications

Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect

Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect

Nonequilibrium magnetooscillations in spatially non-uniform quantum Hall systems

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