Fourier transform infrared phase-modulated ellipsometry for <b><i>in situ</i></b> diagnostics of plasma–surface interactions

Shirafuji, Tatsuru; Motomura, Hideki; Tachibana, Kunihide

doi:10.1088/0022-3727/37/6/r01

Cited by 7 publications

(3 citation statements)

References 70 publications

(101 reference statements)

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“…The experimental class III relates to the current trends towards in situ and operando surface and subsurface characterization techniques, to unravel elementary mechanisms at the plasma-material interface on the atomic scale. The applicability of in situ Fourier transform infrared (FTIR) spectroscopy for the investigation of plasma-surface interactions has, for instance, been elaborately discussed by Shirafuji et al a while ago [222]. More recently, Allain and Shetty discussed many other complementary surface-sensitive techniques in their review, which we highly recommend [9].…”

Section: Multiscale Measuring -Because Nature Is Still the Best Simul...mentioning

confidence: 99%

Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas

Vanraes

Venugopalan

Bogaerts

2021

Applied Physics Reviews

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The physics and chemistry of plasma-surface interaction is a broad domain relevant to various applications and several natural processes, including plasma etching for microelectronics fabrication, plasma deposition, surface functionalization, nanomaterial synthesis, fusion reactors, and some astrophysical and meteorological phenomena. Due to their complex nature, each of these processes are generally investigated in separate subdomains, which are considered to have their own theoretical, modeling and experimental challenges. In this review, however, we want to emphasize the overarching nature of plasma-surface interaction physics and chemistry, by focusing on the general strategy for its computational simulation. In the first half of the review, we provide a menu card with standard and less standardized computational methods to be used for the multiscale modeling of the underlying processes. In the second half, we illustrate the benefits and potential of the multiscale modeling strategy with a case study of Si and SiO2 etching by fluorocarbon plasmas, and identify the gaps in knowledge still present on this intensely investigated plasma-material combination, both on a qualitative and quantitative level. Remarkably, the dominant etching mechanisms remain the least understood. The resulting new insights are of general relevance, for all plasmas and materials, including their various applications. We therefore hope to motivate computational and experimental scientists and engineers to collaborate more intensely on filling the existing gaps in knowledge. In this way, we expect that research will overcome a bottleneck stage in the development and optimization of multiscale models, and thus the fundamental understanding of plasma-surface interaction. TABLE OF CONTENTS wanderlust 3.3.2 Application-specific methods -specialize in the impossible 3.3.3 Machine learning -brainstorming by artificial intelligence 3.3.4 Plasma sheath modeling -matter's aura explained 3.4 Multiscale measuring -because nature is still the best simulation tool 4. PLASMA ETCHING -FROM SCRATCHING THE SURFACE TO GOING IN DEPTH 4.1 The multiscale plasma etching model -one example to represent them all 4.1.1 The need for a bottom-up approach -message in a bottleneck 4.1.2 Hybrid Plasma Equipment Model -example of a hybrid macroscale method 4.1.3 Plasma sheath module -example of a semi-analytical sheath method 4.1.4 Surface kinetics module -example of a deterministic description 4.1.5 Monte Carlo Feature Profile Model -example of a kinetic Monte Carlo method 4.1.6 Experimental benchmarking of the working principle -examples of multiscale measuring 4.1.7 Reactor geometry and operating conditions -example of a case study 4.2 How to implement the surface processes -example of atomistic modeling and measuring data 4.2.1 Elementary plasma-surface mechanisms -simplicity is the ultimate sophistication 4.2.2 Design of the surface chemistry set -a mosaic of quantum data 4.3 Benchmarking the simulation model -bringing uncertainties to the surface 5.

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Section: Multiscale Measuring -Because Nature Is Still the Best Simul...mentioning

confidence: 99%

Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas

Vanraes

Venugopalan

Bogaerts

2021

Applied Physics Reviews

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“…[3][4][5][6][7] In addition, in situ Fourier-transform IR spectroscopy has been used to investigate surface reactions and chemical structures during PECVD processes. [8][9][10][11] In addition to these structures and chemical properties, the electrical properties of dielectric films are critical targets for control in the design and fabrication of electronic devices. 1,12) Therefore, monitoring the electrical properties of dielectric films during plasma exposure is expected to be critical for the further development of plasma-assisted dry processes.…”

Section: Introductionmentioning

confidence: 99%

In situ electrical monitoring of SiO₂/Si structures in low-temperature plasma using impedance spectroscopy

Morozumi

Goya

Kuyama

et al. 2023

Jpn. J. Appl. Phys.

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To investigate the electrical properties and degradation features of dielectric materials during plasma exposure, we developed an in-situ impedance spectroscopy (IS) system. We applied the proposed system to monitor SiO2/Si structures exposed to Ar plasma. By analyzing the measured data based on an equivalent circuit model considering the plasma and SiO2/Si structures, we obtained the resistance (R) and capacitance (C) values for the SiO2 film and SiO2/Si interface. In a cyclic experiment of in-situ IS and high-energy ion irradiation, we characterized dielectric degradation by ion irradiation based on the variations in the R and C values of the SiO2 film. A continuous in-situ IS measurement revealed temporal variations in the electrical properties of the film and interface independently. The thickness-dependent degradation observed for the RC variation was analyzed and compared with the results of previous ex-situ measurement studies. This study demonstrates that the in-situ IS measurement technique is promising for monitoring plasma-assisted dry processes.

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“…Various related techniques have been developed during the past years (for a review, see [13] and references therein). FTIR spectroscopy has been established as a standard technique for measuring the infrared absorption and emission spectra of most materials, with substantial advantages in signal-to-noise ratio, resolution, speed, and detection limits.…”

mentioning

confidence: 99%

Scattering of low coherence radiation and applications

Popescu

Dogariu

2005

Eur. Phys. J. Appl. Phys.

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Fourier transform infrared phase-modulated ellipsometry for in situ diagnostics of plasma–surface interactions

Cited by 7 publications

References 70 publications

Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas

Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas

In situ electrical monitoring of SiO₂/Si structures in low-temperature plasma using impedance spectroscopy

Scattering of low coherence radiation and applications

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Fourier transform infrared phase-modulated ellipsometry for in situ diagnostics of plasma–surface interactions

Cited by 7 publications

References 70 publications

Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas

Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas

In situ electrical monitoring of SiO2/Si structures in low-temperature plasma using impedance spectroscopy

Scattering of low coherence radiation and applications

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Product

Resources

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In situ electrical monitoring of SiO₂/Si structures in low-temperature plasma using impedance spectroscopy