Four-Wire Resistance Measurements of a Bismuth Nanowire Encased in a Quartz Template Utilizing Focused Ion Beam Processing

Murata, Masayuki; Yamamoto, Hiroshi; Tsunemi, Fumiaki; Hasegawa, Yasuhiro; Komine, Takashi

doi:10.1007/s11664-012-1986-9

Cited by 13 publications

(13 citation statements)

References 31 publications

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“…The nanowire was connected to a Keithley 2450 source meter (Beaverton, OR, USA) to measure the I - V characteristics using the four-wire method, which eliminated the lead and the contact resistance [ 26 ]. The measured resistance by fitting the I - V curve of the sample was 357.14 Ω.…”

Section: Resultsmentioning

confidence: 99%

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

Liu

Deng

et al. 2018

Nanomaterials

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Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity.

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Section: Resultsmentioning

confidence: 99%

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

Liu

Deng

et al. 2018

Nanomaterials

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“…An increasing tensile load is applied continuously to the welded specimens until they detach from each other, the maximum load that the weld undergoes is recorded. The four-wire method [ 30 ] is applied in this experiment for the electrical resistance measurement of the weld. A 4-point probe measurement system has been used to measure the electrical resistance of the weld, 2 probes are on the tab and the 2 other probes press on the battery case.…”

Section: Methodsmentioning

confidence: 99%

The Effect of Using a Metal Tube on Laser Welding of the Battery Case and the Tab for Lithium-Ion Battery

Trinh

Lee

2020

Materials

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Given the drawbacks of the conventional welding methods in joining the battery case and tab in the lithium-ion battery, the laser welding technique using the metal tube has been introduced for the weld. The metal tube is supposed to contribute a positive effect including protection to the outside structure by blocking the injection of the spatters, and minimization of the contact gap between the battery case and table. However, the use of the metal tube is believed to cause the plume trapped inside and affect the intensity distribution of the laser gaussian beam. Through the observation and analysis in this study, both advantages and disadvantages of the application of the metal tube on the weld have been analyzed. The use of the metal tube prevents the ejection of the spatter to the outside of the welding zone, as well as minimize the air gap between the battery case and tab in the lap joint weld is also minimized. On the other hand, the trapped plume inside the metal tube and the reduction of the energy of the laser beam have been considered to cause significant changes in the morphology, mechanical, and electrical properties of the weld.

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“…Electrical contacts at electrodes 1 to 6 were fabricated by FIB processing. We have previously established a technique to fabricate ohmic contact electrodes on the side surfaces of a bismuth nanowire for four-wire resistance measurement by ion beam sputtering and deposition of a thin film onto the surface of a nanowire in a quartz template using FIB [ 32 ]. An advanced technique was applied to fabricate electrodes for Hall measurement in this study.…”

Section: Methodsmentioning

confidence: 99%

“…10-nm accuracy. Even if the quartz template covered the bismuth nanowire, the difference in the emission ratio of secondary electrons indicated where the bismuth nanowire was aligned [ 32 , 33 ]. Secondly, a rectangular volume of 8 × 10 μm 2 and a depth of ca .…”

Section: Methodsmentioning

confidence: 99%

“…We have previously reported the successful fabrication of electrodes on a bismuth nanowire encased in a quartz template by utilizing a combination of chemical mechanical polishing (CMP) and focused ion beam (FIB) processing. The resistivity of the bismuth nanowire was thereby successfully measured using the four-wire method [ 32 ]. As a next step, a technique for exposure of the bismuth nanowire for Hall measurements was also developed [ 33 ].…”

Section: Introductionmentioning

confidence: 99%

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Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements

Murata

Hasegawa

2013

Nanoscale Res Lett

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Ohmic contact electrodes for four-wire resistance and Hall measurements were fabricated on an individual single-crystal bismuth nanowire encapsulated in a cylindrical quartz template. Focused ion beam processing was utilized to expose the side surfaces of the bismuth nanowire in the template, and carbon and tungsten electrodes were deposited on the bismuth nanowire in situ to achieve electrical contacts. The temperature dependence of the four-wire resistance was successfully measured for the bismuth nanowire, and a difference between the resistivities of the two-wire and four-wire methods was observed. It was concluded that the two-wire method was unsuitable for estimation of the resistivity due to the influence of contact resistance, even if the magnitude of the bismuth nanowire resistance was greater than the kilo-ohm order. Furthermore, Hall measurement of a 4-μm-diameter bismuth microwire was also performed as a trial, and the evaluated temperature dependence of the carrier mobility was in agreement with that for bulk bismuth, which indicates that the carrier mobility was successfully measured using this technique.PACS81.07.Gf

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Four-Wire Resistance Measurements of a Bismuth Nanowire Encased in a Quartz Template Utilizing Focused Ion Beam Processing

Cited by 13 publications

References 31 publications

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

The Effect of Using a Metal Tube on Laser Welding of the Battery Case and the Tab for Lithium-Ion Battery

Focused ion beam processing to fabricate ohmic contact electrodes on a bismuth nanowire for Hall measurements

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