Four-channel CWDM transmitter chip based on thin-film lithium niobate platform

Chen, Kaixuan; Chen, Gengxin; Ruan, Ziliang; Fan, Xuancong; Zhang, Junwei; Gan, Ranfeng; Liu, Jie; Dai, Daoxin; Guo, Changjian; Liu, Liu

doi:10.1088/1674-4926/43/11/112301

Cited by 12 publications

(5 citation statements)

References 25 publications

(28 reference statements)

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“…The proposed novel design can be extended to any other material platforms, such as silicon nitride, [ 40 ] LiNbO 3 . [ 41 ] Such a high‐performance AWG is expected to play an important role in future optical interconnects and optical communication systems.…”

Section: Discussionmentioning

confidence: 99%

Ultra‐Low‐Crosstalk Silicon Arrayed‐Waveguide Grating (De)multiplexer with 1.6‐nm Channel Spacing

Shen,

Li,

Zhao

et al. 2023

Laser & Photonics Reviews

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A silicon arrayed‐waveguide grating (AWG) with 1.6‐nm channel spacing is proposed and realized with high performances for dense wavelength‐division (de)multiplexing systems. For the present AWG, the arrayed waveguides are broadened uniformly to be far beyond the singlemode regime, so that random phase errors and propagation loss are minimized even without any additional requirement for the fabrication process. Particularly, Euler‐bends are introduced for the arrayed waveguides to shrink the device footprint and suppress any excitation of higher‐order modes. As an example, a 16 × 16 AWG (de)multiplexer is realized with a compact footprint of 600 × 800 µm2 by using single‐etched 220‐nm‐thick silicon photonic waveguides. When using the fabricated AWG to demultiplex the channels launched from the central input port, the excess loss and the adjacent‐channel crosstalk of the central output port are ≈2.2 and ≈−31.7 dB, respectively. Such an AWG is one of the best among silicon implementations.

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Section: Discussionmentioning

confidence: 99%

Ultra‐Low‐Crosstalk Silicon Arrayed‐Waveguide Grating (De)multiplexer with 1.6‐nm Channel Spacing

Shen,

Li,

Zhao

et al. 2023

Laser & Photonics Reviews

Self Cite

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“…In contrast, WoS indexes only 90 publications when the terms "LiNbO*" and "lithium-ion battery" are used. The high interest in LiNbO 3 in optics stems from the fact that crystalline LiNbO 3 is one of the most technologically important optical materials due to its pyroelectric, piezoelectric, electro-caloric, acousto-optical, giant-photovoltaic, ferroelectric, electro-optical, photorefractive, and non-linear optical properties [31][32][33][34][35][36][39][40][41][42][43][44][45]. This revolutionizes low-power and ultra-high-speed solutions for optical communication networks and microwave photonic systems [42].…”

Section: Review On Lithium Niobate For Fast Cycling In Libs 21 Some B...mentioning

confidence: 99%

“…LiNbO 3 has been called the "workhorse of the optoelectronic industry" [42]. LiNbO 3 in the form of a thin film (400 nm film) was found to enable high-speed transmissions of a 100 Gbs −1 data rate per wavelength channel on a chip transmitter [45].…”

Section: Review On Lithium Niobate For Fast Cycling In Libs 21 Some B...mentioning

confidence: 99%

Lithium Niobate for Fast Cycling in Li-ion Batteries: Review and New Experimental Results

et al. 2023

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Li-Nb-O-based insertion layers between electrodes and electrolytes of Li-ion batteries (LIBs) are known to protect the electrodes and electrolytes from unwanted reactions and to enhance Li transport across interfaces. An improved operation of LIBs, including all-solid-state LIBs, is reached with Li-Nb-O-based insertion layers. This work reviews the suitability of polymorphic Li-Nb-O-based compounds (e.g., crystalline, amorphous, and mesoporous bulk materials and films produced by various methodologies) for LIB operation. The literature survey on the benefits of niobium-oxide-based materials for LIBs, and additional experimental results obtained from neutron scattering and electrochemical experiments on amorphous LiNbO3 films are the focus of the present work. Neutron reflectometry reveals a higher porosity in ion-beam sputtered amorphous LiNbO3 films (22% free volume) than in other metal oxide films such as amorphous LiAlO2 (8% free volume). The higher porosity explains the higher Li diffusivity reported in the literature for amorphous LiNbO3 films compared to other similar Li-metal oxides. The higher porosity is interpreted to be the reason for the better suitability of LiNbO3 compared to other metal oxides for improved LIB operation. New results are presented on gravimetric and volumetric capacity, potential-resolved Li+ uptake and release, pseudo-capacitive fractions, and Li diffusivities determined electrochemically during long-term cycling of LiNbO3 film electrodes with thicknesses between 14 and 150 nm. The films allow long-term cycling even for fast cycling with rates of 240C possessing reversible capacities as high as 600 mAhg−1. Electrochemical impedance spectroscopy (EIS) shows that the film atomic network is stable during cycling. The Li diffusivity estimated from the rate capability experiments is considerably lower than that obtained by EIS but coincides with that from secondary ion mass spectrometry. The mostly pseudo-capacitive behavior of the LiNbO3 films explains their ability of fast cycling. The results anticipate that amorphous LiNbO3 layers also contribute to the capacity of positive (LiNixMnyCozO2, NMC) and negative LIB electrode materials such as carbon and silicon. As an outlook, in addition to surface-engineering, the bulk-engineering of LIB electrodes may be possible with amorphous and porous LiNbO3 for fast cycling with high reversible capacity.

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“…81 Driving by this robust dry etch method, rapid progresses have been made in the recent five years. 15,17,20,73,[82][83][84] In 2018, a TFLN EO modulator with 3 dB bandwidth beyond 45 GHz and CMOS-compatible driving voltage (V p = 1.4 V) was demonstrated, as shown in Fig. 5(a), which is considered as a milestone in the development history of TFLN EO modulators.…”

Section: Tfln Eo Modulatormentioning

confidence: 99%

Perspectives of thin-film lithium niobate and electro-optic polymers for high-performance electro-optic modulation

Wang¹,

Chen²,

Zhang³

et al. 2023

J. Mater. Chem. C

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Four-channel CWDM transmitter chip based on thin-film lithium niobate platform

Cited by 12 publications

References 25 publications

Ultra‐Low‐Crosstalk Silicon Arrayed‐Waveguide Grating (De)multiplexer with 1.6‐nm Channel Spacing

Ultra‐Low‐Crosstalk Silicon Arrayed‐Waveguide Grating (De)multiplexer with 1.6‐nm Channel Spacing

Lithium Niobate for Fast Cycling in Li-ion Batteries: Review and New Experimental Results

Perspectives of thin-film lithium niobate and electro-optic polymers for high-performance electro-optic modulation

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