Forward voltage drop degradation in diffused SiC <i>p-i-n</i> diodes

Soloviev, Stanislav I.; Cherednichenko, D. I.; Gao, Yu; Греков, A.; Ma, Yao; Sudarshan, Tangali S.

doi:10.1063/1.1687035

Cited by 15 publications

(13 citation statements)

References 18 publications

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“…However, during the process of preparing the sample for AES test we found that some clusters stay on the surface of JBS diodes that were not removable by metal removal steps. Similiar clusters of stack faults (SF) in the device active region of SiC pn diodes has been previously reported [19], [20]. These SF's are due to high current overstress and lead to a large forward voltage drop degradation.…”

Section: A Sbd Diodesmentioning

confidence: 93%

Proton radiation effects in 4H-SiC diodes and MOS capacitors

Luo¹,

Chen

Ahyi

et al. 2004

IEEE Trans. Nucl. Sci.

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Proton irradiation is used to probe the physics of 4H-silicon carbide (SiC) Schottky barrier diodes (SBDs) and negative channel metal oxide semiconductor (nMOS) capacitors for the first time. Both 4H-SiC SBD diodes and SiC MOS structures show excellent radiation tolerance under high-energy, high-dose proton exposure. Unlike for SiC JBS diodes, which show a strong increase in series resistance after proton irradiation, these SiC SBDs show very little forward bias -degradation after exposure to 63.3 MeV protons up to a fluence of 5 10 13 p/cm 2 . An improvement in reverse leakage current after irradiation is also observed, which could be due to a proton annealing effect. The small but observable increase in blocking voltage for these SiC SBDs is attributed to a negative surface charge increase, consistent with earlier gamma results. The resultant e change of 4H-SiC nMOS capacitors under proton irradiation was used to quantify the radiation induced changes to the blocking voltage in the SBD diodes in MEDICI simulations, and showed a good agreement with the experimental data. Characterization of these capacitors also suggests that 4H-SiC MOS structures are radiation hard.Index Terms-Negative channel metal oxide semiconductor (nMOS) capacitors, Schottky barrier diodes (SBDs).

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Section: A Sbd Diodesmentioning

confidence: 93%

Proton radiation effects in 4H-SiC diodes and MOS capacitors

Luo¹,

Chen

Ahyi

et al. 2004

IEEE Trans. Nucl. Sci.

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“…Two possible mechanisms, which may be simultaneously present in the device, are thought to be responsible for the degradation: (a) increase of the density of surface states along the SiC/SiO 2 interface, which results in an increased surface recombination current [16,17] and (b) bulk recombination in the base due to the generation and growth of Shockley stacking faults (SSFs) [17,18]. Although the later mechanism is similar to the degradation of 4H-SiC p-n junction diodes associated with the appearance of SSFs in the entire base region of the diode [19][20][21], no clear experimental proof of this mechanism was provided in the case of 4H-SiC BJTs.…”

Section: Introductionmentioning

confidence: 98%

Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

Muzykov¹,

Kennedy²,

Zhang³

et al. 2009

Microelectronics Reliability

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“…In spite of growing world-wide interest [8], and recent reports of significant progress in the performance of these diodes [9], a comprehensive understanding of the phenomenon is still limited. In spite of growing world-wide interest [8], and recent reports of significant progress in the performance of these diodes [9], a comprehensive understanding of the phenomenon is still limited.…”

Section: Introductionmentioning

confidence: 99%

Microstructural Aspects and Mechanism of Degradation of 4H-SiC PiN Diodes under Forward Biasing

et al. 2004

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Devices fabricated from the wide bandgap semiconductor SiC have many advantages over those made from conventional semiconductors. Thus, performance characteristics of some 4H-SiC devices can be two orders of magnitude better than equivalent devices made from silicon. On the other hand, new and unexpected problems have emerged with the operation of some SiC devices that need to be understood and solved before further progress can be made in this area. One of the most intriguing problems has been the degradation of bipolar PiN diodes that have major advantages over unipolar Schottky barrier diodes at high blocking voltages. The electrical degradation of the PiN diodes refers to a drop in voltage under extended forward current operation. The degradation appears to be associated with the appearance of stacking faults (SFs) in the entire base region of the diode. In this paper, we discuss some puzzling aspects of stacking fault formation in such diodes. Electroluminescence as well as TEM has been used to investigate the degradation problem and, based on experimental results, the formation of stacking faults within the device, possible sources of partial dislocations responsible for the stacking faults, and the enhanced motion of dislocations under forward biasing are considered.

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Forward voltage drop degradation in diffused SiC p-i-n diodes

Cited by 15 publications

References 18 publications

Proton radiation effects in 4H-SiC diodes and MOS capacitors

Proton radiation effects in 4H-SiC diodes and MOS capacitors

Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors

Microstructural Aspects and Mechanism of Degradation of 4H-SiC PiN Diodes under Forward Biasing

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