Forward and reverse recovery behaviour of diodes in power converter applications

Shammas, N.Y.A.; Chamund, D.; Taylor, Paul D.

doi:10.1109/icmel.2004.1314548

Cited by 9 publications

(6 citation statements)

References 5 publications

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“…Also, calculation of the switch device losses is necessary for achieving the maximum efficiency of the transformerless PV inverters. Switch device losses are calculated based on the device datasheet and calculation method in literature [24][25][26][27][28]. The specifications and switch devices for the efficiency evaluation of several existing inverters are listed in Table 2. IGBT and diode power losses can be divided in three groups: conduction losses, switching losses and blocking losses.…”

Section: Calculation and Evaluation Of Total Losses For Power Semiconmentioning

confidence: 99%

Evaluation and analysis of transformerless photovoltaic inverter topology for efficiency improvement and reduction of leakage current

Cha

Kim

Cho

et al. 2015

IET Power Electronics

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In transfomerless photovoltaic (PV) grid-connected inverter application, to reduce leakage current and to increase efficiency, many inverter topologies have been proposed. The method for increasing efficiency and reducing leakage current is evaluated and analysed in the present study. The operation of transfomerless PV inverter topologies with high-performance such as full-bridge, H5, H6, HERIC and paralleled-buck topology is analysed to calculate switching losses, conduction losses and free-wheeling losses. Device total losses for inverter topology are calculated according to the switching frequency and the output power. Also, a novel high-frequency model of inverter topology is proposed using the leg voltage and high-frequency equivalent circuit. The relation between the parasitic capacitor voltage and its leakage current is explained using the proposed high-frequency model. Also, the magnitude of the high-frequency voltage in the parasitic capacitor is derived mathematically. Efficiency of the several inverter topology according to the output power is compared and the leakage current is analysed using a novel high-frequency model. Finally, the efficiency and leakage current analysis are verified by simulation tool and 3 kW prototype.

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Section: Calculation and Evaluation Of Total Losses For Power Semiconmentioning

confidence: 99%

Evaluation and analysis of transformerless photovoltaic inverter topology for efficiency improvement and reduction of leakage current

Cha

Kim

Cho

et al. 2015

IET Power Electronics

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“…When the body diode is switched from the on-state to the off state, in order to completely turn off, all the carriers injected inside must be swept away. During this process, a large reverse recovery current occurs, as shown in Figure 7b [29]. The reverse recovery charge (Q rr ) is proportional to the reverse recovery time (t rr ) and the peak current (I RM ) [30].…”

Section: Body Diode and Switching Characteristicsmentioning

confidence: 98%

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Cheon

Kim

2021

Materials

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In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

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“…The reverse voltage of a diode is an important factor that affects the reverse recovery; thus, it is worth mentioning as well [21] . In the shoot-through state (Fig.…”

Section: Switch Voltage Stress and Diode Reverse Voltagementioning

confidence: 99%

Novel Switched-Inductor Quasi-Z-source Inverter

Deng¹,

Zheng²,

Mashino³

2014

Journal of Power Electronics

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A novel switched-inductor quasi-Z-source inverter is proposed in this study. Compared with classic topologies, the boost ability of the proposed topology is strengthened. The voltage stress of the capacitors, diodes, and power devices are reduced, and the current ripple of the DC voltage source is suppressed. Conversion efficiency is also improved. The operation principle of the proposed topology is analyzed in detail and compared with that of similar topologies. The feasibility of the proposed topology is verified by simulations and experiments on a laboratory prototype.

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Forward and reverse recovery behaviour of diodes in power converter applications

Cited by 9 publications

References 5 publications

Evaluation and analysis of transformerless photovoltaic inverter topology for efficiency improvement and reduction of leakage current

Evaluation and analysis of transformerless photovoltaic inverter topology for efficiency improvement and reduction of leakage current

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Novel Switched-Inductor Quasi-Z-source Inverter

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