Formulation of Sol–Gel Derived Bismuth Silicate Dielectric Ink for Flexible Electronics Applications

Abstract

An agile formulation for the development of a low dielectric constant ink of nanostructured bismuth silicate (nBSO), synthesized by sol-gel method, was demonstrated. The viscous screen printable ink was formulated by controlling the organic additives. The viscosity, as well as dynamic viscoelastic properties of the formulated ink, was suitably tuned, to yield ideal flow characteristics. Microstructure and surface roughness of the printed film were characterized, and the film shows a minimum surface roughness values (Ra = 80.3 nm and Rq = 102 nm).Microwave dielectric properties of the printed dielectric film were ɛ r = 4.36 and tanδ = 1.6×10 -2 at 10 GHz. The apparent leakage current density of the film is of the order of 10 -5 A/cm 2 . The improved dielectric and thermal properties, combined with low leakage current makes nBSO dielectric ink a suitable candidate for printed electronics.

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