Forming Point-Contact Silicon Transistors

Abstract

able barrier, extending radially from the bottom of the well. Such a barrier might be made by squeeze cementing techniques in reservoirs where the radial permeability is high compared to the vertical; also, it may be possible to locate the completion of the well above a naturally occurring shale break; or, conceivably, the development of new tools to place an artificial barrier might well be justified.The relatively low production rates (computed in the preceding section) at which water can be expected to enter either a gas or an oil well indicated that the water can be expected to cone into the well in all cases under normal production rates in whrch the geology of the formation approximates the mathematical models used here. This raises the question: Will enough water enter the well to present a practical problem? We have studied this question by the use of models and also the problem: "How long does it take for the cone for form?" We intend to present the results of this investigation in a second paper.A new technique is reported in which silicon can be formed to provide transistor action. A suitable impurity is arced at the surface of the silicon causing the impurity to be diffused into a small region. Tests have been carried out using n-type and p-type silicon with various impurities. Initial results indicated voltage gains as high as 75 and power gains between 15 and 60. Other characteristics, such as variations in current multiplication with emitter current, were examined and the mechanism of alpha was compared with the theories developed by Sittner.