Formation process and material properties of reactive sputtered IrO2 thin films

Horng, Ray−Hua; Wuu, Dong Sing; Wu, L. H.; Lee, M.K

doi:10.1016/s0040-6090(00)01141-x

Cited by 51 publications

(46 citation statements)

References 7 publications

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“…This broad diffraction peak can be attributed to the formation of amorphous IrO 2 thin films. 6) At T sub > 573 K, IrO 2 diffraction peaks with tetragonal structure appeared. The diffraction peaks shifted to higher angle and the line width of the diffraction peaks narrowed as the substrate temperature increased.…”

Section: Methodsmentioning

confidence: 99%

Electrical and Optical Properties of IrO<SUB>2</SUB> Thin Films Prepared by Laser-ablation

2004

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IrO 2 thin films were prepared by laser ablation using an Ir target at substrate temperatures (T sub ) from room temperature (RT) to 873 K in an oxygen atmosphere. A small amount of Ir metal was contained in IrO 2 films prepared at T sub ¼ RT. The lattice parameters particularly a-axis values decreased with increasing T sub , and the values were a ¼ 0:452 nm, c ¼ 0:315 nm at T sub ¼ 873 K in agreement with those of bulk IrO 2 . The surface roughness increased from 1.2 to 5.2 nm with increasing T sub . These values imply that the IrO 2 films were far smoother than those prepared by MOCVD and sputtering. The electrical conductivity of IrO 2 films prepared at T sub ¼ RT changed from semiconductor-like to metallic behavior after a heat-treatment; on the other hand, those prepared at T sub > 573 K were metallic without changing after heat-treatment. The IrO 2 films prepared at T sub ¼ 873 K showed the highest electrical conductivity of 37 Â 10 À8 m at RT. The optical transmittance of IrO 2 thin films were mainly dependent on thickness and surface roughness, and were around 10% at a wavelength range from 300 to 800 nm.

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Section: Methodsmentioning

confidence: 99%

Electrical and Optical Properties of IrO<SUB>2</SUB> Thin Films Prepared by Laser-ablation

2004

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“…It is worth noting here that all the IrO 2 films deposited at T s = 400 -C and above are highly conductive, their resistivity values compare very well with those of (011) and (001) oriented bulk single-crystal IrO 2 (34.9 T 1 and 49.1 T 0.5 AV cm, respectively [18]). IrO 2 films with a (110) orientation and the resistivity of 70 AV cm have been prepared by reactive sputtering using an Ir target in oxygen [19]. IrO 2 films prepared by MOCVD at 623 -723 K had the resistivity in the range of 70 -730 AV cm [20].…”

Section: Electrical Resistivitymentioning

confidence: 99%

Substrate temperature dependent morphology and resistivity of pulsed laser deposited iridium oxide thin films

et al. 2006

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“…It is worth noting here that all the IrO 2 fi lms deposited at T s =400 ℃ and above are highly conductive, their resistivity values match very well with those of (011) and (001) oriented bulk single-crystal IrO 2 (34.9±1 and 49.1±0.5 μΩ·cm, respectively [14] ). IrO 2 films with a (110) orientation and the resistivity of 70 μΩ·cm have been prepared by reactive sputtering using an Ir target in oxygen [15] . IrO 2 fi lms prepared by MOCVD at 623-723 K had the resistivity of above 70 μΩ·cm [16] .…”

Section: Electrical Resistivitymentioning

confidence: 99%

Preparation and properties of IrO2 thin films grown by pulsed laser deposition technique

Gong

Wang

Shen

et al. 2007

J. Wuhan Univ. Technol.

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Highly conductive IrO 2 thin films were prepared on Si (100) substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of oxygen pressure and substrate temperature on the structure, morphology and resistivity of IrO 2 fi lms. It was found that the above properties were strongly dependent on the oxygen pressure and substrate temperature. At 20 Pa oxygen ambient pressure, pure polycrystalline IrO 2 thin fi lms were obtained at substrate temperature in the 300-500 ℃ range with the preferential growth orientation of IrO 2 fi lms changed with the substrate temperature. IrO 2 fi lms exhibited a uniform and densely packed granular morphology with an average feature size increasing with the substrate temperature. The room-temperature resistivity variations of IrO 2 fi lms correlated well with the corresponding fi lm morphology changes. IrO 2 fi lms with the minimum resistivity of (42 ±6) μΩ·cm was obtained at 500 ℃.

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Formation process and material properties of reactive sputtered IrO2 thin films

Cited by 51 publications

References 7 publications

Electrical and Optical Properties of IrO<SUB>2</SUB> Thin Films Prepared by Laser-ablation

Electrical and Optical Properties of IrO<SUB>2</SUB> Thin Films Prepared by Laser-ablation

Substrate temperature dependent morphology and resistivity of pulsed laser deposited iridium oxide thin films

Preparation and properties of IrO2 thin films grown by pulsed laser deposition technique

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