Formation process and adjustment of the profile angle of Al–Mo composite electrodes in thin-film transistors for large-size premium displays

Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN

“…11 Due to its advantages such as excellent conductivity, ease of preparation, and low cost, Al is widely used as the material for the gate and source/drain electrodes in transistor devices. 12 In terms of thermal management, the heat dissipation properties of aluminum are critical in preventing electronics from overheating, helping to improve the stability and longevity of devices. Additionally, research indicates that introducing an aluminum shielding layer between the source electrode and graphene gate can significantly enhance the transistor's on-current by at least one order of magnitude when a positive gate voltage is applied.…”