Formation of xanthen and fluorene derivatives by competitive 1,4- and 1,3-cycloadditions of quinonylmethyl anions to quinones

Dean, F. M.; Houghton, L. E.

doi:10.1039/j39700000722

Cited by 11 publications

(12 citation statements)

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“…At the same time, at the sites of the A and B sublattices, it contains atoms of boron and nitrogen. This causes the appearance of a wide energy gap (5.2-5.9 eV) in the electronic structure of h-BN [287][288][289][290][291], which underlies the wide usage of h-BN as a high-quality dielectric in graphene devices [292]. Note that h-BN is chemically and thermally stable and is not characterized by the presence of broken bonds or surface traps for the charge carriers.…”

Section: New Promising Systems With Anomalous Pairingmentioning

confidence: 99%

Anomalous superconductivity and superfluidity in repulsive fermion systems

2015

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We discuss the mechanisms of unconventional superconductivity and superfluidity in 3D and 2D fermionic systems with purely repulsive interaction at low densities. We construct phase diagrams of these systems and find the areas of the superconducting state in free space, as well as on the lattice in the framework of the Fermi-gas model with hard-core repulsion, the Hubbard model, the Shubin-Vonsovsky model, and the t − J model. We demonstrate that the critical superconducting temperature can be greatly increased in the spin-polarized case or in a two-band situation already at low densities. The proposed theory is based on the Kohn-Luttinger mechanism or its generalizations and explains or predicts anomalous p-, d-, and f -wave pairing in various materials, such as high-temperature superconductors, the idealized monolayer and bilayer of doped graphene, heavy-fermion systems, layered organic superconductors, superfluid 3 He, spin-polarized 3 He mixtures in 4 He, ultracold quantum gases in magnetic traps, and optical lattices.

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Section: New Promising Systems With Anomalous Pairingmentioning

confidence: 99%

Anomalous superconductivity and superfluidity in repulsive fermion systems

2015

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“…This has led to discrepancies between measurements performed on different tBLG samples [2,9,23]. Electronic structure measurements of tBLG on less interacting substrates, such as hexagonal boron nitride (BN) [24][25][26][27], are therefore necessary to understand the intrinsic properties of tBLG.…”

mentioning

confidence: 99%

Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene

et al. 2015

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Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically-smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moiré patterns and moiré super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data is explained by a theory of moiré bands that incorporates ab initio calculations and confirms the strongly non-perturbative character of tBLG interlayer coupling in the small twist-angle regime.

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“…This behavior can be attributed to a large-period moiré pattern formed in the heterostructure, which acts as a periodic potential landscape and gives rise to mini-Brillouinzone bands. [1][2][3][4][5] The gate voltage difference between the CDP and the SDP in Fig. 1(d) is denoted by ∆V g , and it is related to the large moiré superlattice period (λ) by the equation 3…”

Section: Methodsmentioning

confidence: 99%

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

Huang

Kang

et al. 2018

Journal of Applied Physics

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Graphene/hexagonal boron nitride (G/h-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly 0 • -twisted G/h-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately 3000 cm 2 V −1 s −1 at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry to the presences of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/h-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/h-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/h-BN heterostructures. a) Corresponding

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Formation of xanthen and fluorene derivatives by competitive 1,4- and 1,3-cycloadditions of quinonylmethyl anions to quinones

Cited by 11 publications

References 0 publications

Anomalous superconductivity and superfluidity in repulsive fermion systems

Anomalous superconductivity and superfluidity in repulsive fermion systems

Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

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