Formation of Titanium Nitride, Titanium Carbide, and Silicon Carbide Surfaces by High Power Femtosecond Laser Treatment

Abstract

Coatings based on titanium nitrides, titanium carbides and silicon carbides can optimize the surface properties of titanium or silicon for various applications ranging from biocompatibility to chemical stability and durability. Here, we investigated a high power (100 W) high pulse repetition rate femtosecond laser process (λ=1030 nm, τ=750 fs, f=1 MHz) for the treatment of titanium and silicon in atmospheres of argon, nitrogen, methane, ethene and acetylene. In a nitrogen atmosphere, a homogeneous coating of TiON is formed on titanium. In an ethene/argon atmosphere coatings of TiOC and SiC are formed on Ti and Si, respectively. The process allows a fast surface transformation with a process rate of 0.33 cm2 s−1 and a high spatial resolution below 0.5 mm with a minimal heat affected zone at the same time. In contrast to low repetition rate femtosecond laser processed samples, the surfaces are more robust against mechanical impact. At the same time, the surfaces reveal a distinct microstructure in comparison to coatings obtained by vapor deposition techniques.

Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation

“…Plasma-assisted CVD can reduce the reaction temperature; however, sophisticated vacuuming and gas flow accessories are inevitable for CVD growth . Other major techniques are sputtering, and plasma-induced chemical processes on surfaces . Plasma sources and ultrashort laser pulses are employed to induce surface-bound chemical processes …”

“…Other major techniques are sputtering, and plasma-induced chemical processes on surfaces . Plasma sources and ultrashort laser pulses are employed to induce surface-bound chemical processes …”

“…With their ultrashort pulses and high peak intensities, femtosecond lasers have been used for plasma-induced chemical processes on surfaces and tailoring silicon carbide’s properties. , They have also been used in synthesizing SiC nanoparticles and depositing SiC thin films. , Similarly, femtosecond laser treatment of C-coated Si resulted in the direct synthesis of SiC nanocrystals…”

“…15 Other major techniques are sputtering, 14 and plasma-induced chemical processes on surfaces. 25 Plasma sources and ultrashort laser pulses are employed to induce surface-bound chemical processes. 25 With their ultrashort pulses and high peak intensities, femtosecond lasers have been used for plasma-induced chemical processes on surfaces and tailoring silicon carbide's properties.…”

“…25 Plasma sources and ultrashort laser pulses are employed to induce surface-bound chemical processes. 25 With their ultrashort pulses and high peak intensities, femtosecond lasers have been used for plasma-induced chemical processes on surfaces and tailoring silicon carbide's properties. 25,26 They have also been used in synthesizing SiC nanoparticles and depositing SiC thin films.…”