Formation of thin silicon nitride layers on Si by low energy N2+ ion bombardment

The effect of constraints on the initial steps of adsorption of nitrogen atoms on the silicon surface as modeled by the cluster [Si9H12+N]

“…In Fig. 6, two high intensities modes at 881 and 909 cm À1 (larger basis) found in this work for structure VIII, and associated with a planar N-Si 3 moiety, are very close to those reported experimentally by Honda et al [21], Liu et al [22], Ito et al [23], and Bachurin et al [4] and also assigned to a mode involving the nitrogen in a planar group N-Si 3 . On the other hand, structure IV also presents an important mode similar to that shown in Fig.…”

“…With this technique the presence of impurities is substantially reduced and a better control of the composition and the thickness of the desired film can be obtained. For high values of energy, of the order of 1 keV [4][5][6][7][8][9], with the impact of the collision the ions break the surface bonds and penetrate directly inside the substrate, while for low values of energy, below 100 eV [10,11], the interaction occurs only with the surface atoms, followed by a penetration into the bulk. Experimentally, it is known that ions with low energy suffer neutralization before interaction, and the net result corresponds to neutral atoms or molecules interacting with the silicon atoms.…”

Elastic properties of sub-stoichiometric nitrogen ion implanted silicon

“…Therefore only SiN x layers with sub-stoichiometric nitrogen contents were formed due to ion implantation. Since the annealing temperature was chosen relatively low, no diffusion of atoms inside the silicon nitride layer is expected [12][13][14]. This is fully confirmed by comparison of nitrogen depth profiles obtained by SIMS after 1st and 3rd annealing steps, while no difference was detected.…”

Ion-induced tracks in amorphous Si3N4 films

“…This material can be processed in thin films using different techniques like high fluence nitrogen implantation [3], RF magnetron sputtering [4] and low pressure chemical vapour deposition (LPCVD) [5]. This latter technique, which allows a good control of layer thickness and composition, will be used in the present work.…”