Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water

Shiozaki, Nanako; Sato, Taketomo; Hashizume, Tamotsu

doi:10.1143/jjap.46.1471

Cited by 32 publications

(35 citation statements)

References 12 publications

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“…5, for the untreated GaN surface, the Ga 3d spectrum can be decomposed into three components in addition to the Ga-N component (19.6 eV): those chemically shifted by 0.92 eV toward higher binding energy (BE), 0.49 toward lower BE, and 1.76 eV toward lower BE, which can be assigned to Ga bonding to oxygen (Ga-O; 20.5 eV) [21,22], Ga bonding to N-H (Ga-NH; 19.21 eV) [23], and metallic Ga (17.5-18.4 eV) [24]. It has been reported that a metallic Ga layer forms on a damaged GaN surface [25].…”

Section: Chemical Propertiesmentioning

confidence: 99%

Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst

Murata

Sadakuni

Okamoto

et al. 2012

Journal of Crystal Growth

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Section: Chemical Propertiesmentioning

confidence: 99%

Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst

Murata

Sadakuni

Okamoto

et al. 2012

Journal of Crystal Growth

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“…[47,48] This has already been shown to provide better control over surface termination [49] and subsequent surface coverage. [50] As etching techniques require the formation and subsequent dissolution of oxides, the degree of environmental degradation within an aqueous environment should provide insight into the more reactive species on the surface.…”

Section: Introductionmentioning

confidence: 99%

Comparison of the Stability of Functionalized GaN and GaP

et al. 2015

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Surface functionalization via 1 H,1 H,2 H,2H-perfluoro octanephosphonic acid was done in the presence of phosphoric acid to provide a simplified surface passivation technique for gallium nitride (GaN) and gallium phosphide (GaP). In an effort to identify the leading causes of surface instabilities, hydrogen peroxide was utilized as an additional chemical modification to cap unsatisfied bonds. The stability of the surfaces was studied in an aqueous environment and subsequently characterized. A physical characterization was carried out to evaluate the surface roughness and water hydrophobicity pre and post stability testing via atomic force microscopy and water goniometry. Surface-chemistry changes and solution leaching were quantified by X-ray photoelectron spectroscopy and inductively coupled plasma mass spectrometry. The results indicate a sensitivity to hydroxyl terminated species for both GaN and GaP under aqueous environments, as the increase of the degree of leaching was more significant for hydrogen peroxide treated samples. The results support the notion that hydroxyl species act as precursors to gallium oxide formation and lead to subsequent instability in aqueous solutions.

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“…We have investigated the feasibility of wet oxidation technique with glycol solution for surface passivation of GaN-based devices [1]. The wet oxidation was performed in a mixture of propylene glycol and 3wt% tartaric acid, as shown in Fig.…”

Section: Electrochemical Oxidation Of Gan and Algan For Surface Passimentioning

confidence: 99%

Surface control of GaN alloys for photonic and electronic devices

2009

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Surface characterization and control technologies were applied to GaN and AlGaN surfaces. It was found that a unique "air-gap CV" technique is effective in evaluating surface state density on free AlGaN surfaces. A photoelectrochemical process, utilizing a mixed solution of propylene glycol and tartaric acid, was employed to form a thin oxide layer on GaN and AlGaN. We observed an enhancement of drain current in the AlGaN/GaN HEMT having a narrow channel width of 500 nm after the oxidation of the channel walls by the electrochemical process. To improve the uniformity of the effective electric field in the channel, a multi-mesa-channel (MMC) AlGaN/GaN HEMT has been proposed and developed. With forming a periodic trench just under the gate region by an ECR-plasma assisted dry etching, the MMC HEMT has parallel mesa-shaped channels with 2-dimensional electron gas (2DEG) surrounded by the top-and side-gate electrodes.

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Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water

Cited by 32 publications

References 12 publications

Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst

Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst

Comparison of the Stability of Functionalized GaN and GaP

Surface control of GaN alloys for photonic and electronic devices

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