1998
DOI: 10.1016/s0042-207x(98)00167-5
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Formation of the sodium 1-D structures in doped NaCl by high energy electron irradiation

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Cited by 4 publications
(11 citation statements)
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“…1b). These values are much larger than the electron-phonon linewidth of bulk sodium (6-7 G) but significantly smaller than the width for F-aggregate centers $35 G [3,4]. Exchange interaction between F-aggregate centers and the conduction electrons in the bottleneck regime results in a single ESR line with a linewidth of about 20 G (a description of the ESR results for heavily-irradiated samples with a defect model combined with a bottleneck effect was proposed in [9]).…”
Section: High Temperature (Range I)mentioning
confidence: 78%
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“…1b). These values are much larger than the electron-phonon linewidth of bulk sodium (6-7 G) but significantly smaller than the width for F-aggregate centers $35 G [3,4]. Exchange interaction between F-aggregate centers and the conduction electrons in the bottleneck regime results in a single ESR line with a linewidth of about 20 G (a description of the ESR results for heavily-irradiated samples with a defect model combined with a bottleneck effect was proposed in [9]).…”
Section: High Temperature (Range I)mentioning
confidence: 78%
“…1a), g ¼ 2.0014 (Fig. 1c), at the melting point the ESR linewidth increases by an amount of $5.5 G, an isotropic Knight shift K ¼ 0.11% (see [3,4]). The ESR linewidth depends on the defect state of the damaged crystals, and at 300 K our NaCl-K and NaCl-KBF 4 samples yield linewidths of 21 and 18 G, respectively (Fig.…”
Section: High Temperature (Range I)mentioning
confidence: 92%
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