2011
DOI: 10.1134/s1063783411110072
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Formation of submicron partially ordered domain structures in ferroelectric and magnetic materials

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Cited by 4 publications
(3 citation statements)
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“…The electro-optical sensor ( 4) is nothing more than a ferroelectric crystal, on the surface of which a periodic domain structure (PDS) is formed [43]. To increase the sensitivity and resolution when locating field strength gradients, the resonance properties of the PDS are used for a given wavelength of the laser emitter (1) [44].…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The electro-optical sensor ( 4) is nothing more than a ferroelectric crystal, on the surface of which a periodic domain structure (PDS) is formed [43]. To increase the sensitivity and resolution when locating field strength gradients, the resonance properties of the PDS are used for a given wavelength of the laser emitter (1) [44].…”
Section: Methodsmentioning
confidence: 99%
“…In this case, the operator is at a safe distance from the high-voltage insulator and only touches the dielectric rod. The obtained data are recorded using special software, which records the spatial position of the electro- The electro-optical sensor ( 4) is nothing more than a ferroelectric crystal, on the surface of which a periodic domain structure (PDS) is formed [43]. To increase the sensitivity and resolution when locating field strength gradients, the resonance properties of the PDS are used for a given wavelength of the laser emitter (1) [44].…”
Section: Methodsmentioning
confidence: 99%
“…[4,5] For example, ferroelectric domain structures with a periodic architecture tend to have large optical nonlinearities as a result of changes in the signs of the permittivity tensor and some other linear and nonlinear coefficients. [6] The periodic 180° stripe domain is very useful for implementing quasi-phase matching in nonlinear ferroelectric optical materials. [7] Ferroelectrics with periodic domain structures also provide a valuable platform for designing high-density nonvolatile memory devices.…”
Section: Doi: 101002/adma202211584mentioning
confidence: 99%