Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application

Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

“…Industrial as well as academic researchers have investigated several alternatives to solve these limitations and issues over the last few years. One concept consists of replacing the FG with discrete charge storage nodes constructed from nanoparticles (NPs) such as Si, Ge, and Au [20][21][22][23][24][25][26] and charge trapping sites (CTSs) such as a silicon nitride layer [27][28][29]. It has been demonstrated that a large memory window can be obtained using the Ge-NPs embedded in dielectrics [20,21].…”

Formation of Mn-germanide nanodots on ultrathin SiO2induced by remote hydrogen plasma

“…The application of group-IV based metallic nanodots (NDs) such as silicide and germanide NDs, to a floating gate in MOS memories has been attracting much attention as charge retention characteristics can be improved and there can be compatibility with Si-based semiconductor devices. [9][10][11][12][13][14] By replacing nonmagnetic NDs with ferromagnetic NDs, floating gate MOS memories can have the functionality to control charging and discharging properties in ND floating gate and improve retention characteristics by using the tunnel magnetoresistance effect. 15,16) Recently, Mn-doped Ge has especially garnered attention since the first report of ferromagnetism in Mn x Ge 1−x films.…”