Evolution of Spontaneous Structures in Dissipative Continuous Systems
DOI: 10.1007/3-540-49537-1_11
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Formation of Spatio-Temporal Structures in Semiconductors

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Cited by 8 publications
(4 citation statements)
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“…We believe that an inhomogeneous SI GaAs with the current flow localized in small regions of the active electrode area causes the observed variations in peak voltages, multiple NDC regions, peak spreading and exponentially rising background current density J . SGDSs are known to be complex nonlinear dynamic systems which exhibit current instabilities and self-organized formation of spatio-temporal patterns under the influence of strong electric fields [26,47,48]. Detailed study of pressure and illumination on CVC effects is given in [32].…”
Section: Resultsmentioning
confidence: 99%
“…We believe that an inhomogeneous SI GaAs with the current flow localized in small regions of the active electrode area causes the observed variations in peak voltages, multiple NDC regions, peak spreading and exponentially rising background current density J . SGDSs are known to be complex nonlinear dynamic systems which exhibit current instabilities and self-organized formation of spatio-temporal patterns under the influence of strong electric fields [26,47,48]. Detailed study of pressure and illumination on CVC effects is given in [32].…”
Section: Resultsmentioning
confidence: 99%
“…Microscopic analyses of low temperature impurity breakdown have been based upon Monte Carlo (MC) simulations [27,28] for p-Ge and for n-GaAs [29,30]. Using such microscopic models the nascence of current filaments has been simulated for two-dimensional simplified pointcontact geometries [5,31,32], including also the effect of a transverse magnetic field [33]. While there the contacts were only taken into account by imposing Dirichlet boundary conditions on parts of the rectangular sample edges, here we will model more realistic contact geometries by appropriate small circular areas in the interior of the sample.…”
Section: Simulation Methodsmentioning
confidence: 99%
“…Semiconductors are complex nonlinear dynamic systems which exhibit current instabilities and self-organized formation of spatio-temporal patterns under the influence of strong electric fields [1][2][3][4][5]. Within the past years semiconductors have become a versatile model system for the study of such phenomena since sophisticated growth technologies and spatially and temporally resolved measurement techniques have provided the possibility to investigate semiconductor structures with desired properties.…”
Section: Introductionmentioning
confidence: 99%
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