Formation of SnSSe thin films by heat treatment of SnS thin films in S/Se atmosphere

Avendaño, C. A. Meza; Courel, Maykel; Pantoja, Joel; Valderrama, Rocío Castañeda; Ayala, Alicia; Santos, I. Montoya De Los; Pérez, J.

doi:10.1088/2053-1591/ab1291

Cited by 9 publications

(8 citation statements)

References 39 publications

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“…Difference between 3p 1/2 and 3p 3/2 is measured to be 6.08 eV, which is consistent with the existence of Se (2À ) . [36] Along with those peaks, two further peaks, at 160.93 and 162.03 eV, that match to 2p 1/2 and 2p 3/2 binding energies for S. [37] binding energies of Se with 3d 3/2 and 3d 5/2 , respectively. In the Sn survey of SnSSe thin film, the Sn 3d 5/2 and 3d 3/2 peaks have also been split into two peaks (see Figure 4(f)).…”

Section: X-ray Photoelectron Spectroscopy Analysismentioning

confidence: 76%

Enhanced Opto‐Electrical Properties of Chalcogenide‐Rich Tin Selenide Thin Film after Incorporating Sulfur Yielding Tin Sulfoselenide

Sarkar,

Nisha,

Kumar

et al. 2023

ChemistrySelect

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Alloy engineering are efficient methods to improve the physical properties of two‐dimensional (2D) material‐based photovoltaic application. Tin chalcogenide belonging to layered structured semiconducting family has been a significant compound due to its outstanding characteristics. Tin selenide (SnSe) is known as promising layered compound to develop 2D materials for optoelectronic devices. The current study focused onto the effect of tin sulfoselenide (SnSSe) alloy engineering on the structural, morphological, optical, and electrical characteristics. X‐ray Diffraction (XRD) confirmed that SnSSe and SnSe are exist in the orthorhombic crystal structure phase without other secondary phases, with the preferred high‐intensity peak along (111) oriented plane. Raman spectra was reported to give information about the vibrational characteristics of the compounds. The presence of Sulfur ion in SnSSe was further confirmed by Energy Dispersive X‐ray Spectroscopy (EDAX) and X‐ray Photoelectron Spectroscopy (XPS) analysis. Bandgap energy (Eg) has been analysed by Tauc's plot and the derivative of transmittance spectra. According to both sets of analyses, the bandgap of the SnSSe thin film is considerably smaller than that of the SnSe thin film. Hall measurements indicated that SnSSe exhibits the higher hole mobility. The present work‘s results offer useful insight into the prospective device applications of two‐dimensional alloy materials.

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Section: X-ray Photoelectron Spectroscopy Analysismentioning

confidence: 76%

Enhanced Opto‐Electrical Properties of Chalcogenide‐Rich Tin Selenide Thin Film after Incorporating Sulfur Yielding Tin Sulfoselenide

Sarkar,

Nisha,

Kumar

et al. 2023

ChemistrySelect

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“…In the XPS spectrum for Zn 2p ( Figure 6 b), the strong peaks were centered at binding energies of 1025.0 eV and 1042.29 eV, which were assigned to Zn 2p 1/2 and Zn 2p 3/2, respectively, with a peak separation of 17.17 eV, consistent with Zn 2+ [ 32 ]. Figure 6 c indicates that the binding energies for the Sn3d3/2 and Sn3d1/2 are placed at 486.52 eV and 495.02 eV, respectively, with a peak separation of 8.50 eV, confirming the Sn 4+ oxidation state [ 33 ]. The S 2p core spectrum of “S” ( Figure 6 d) displays the peaks for 2p 3/2 and 2p 1/2 at 159.91 eV and 165.45 eV, respectively, with a peak splitting at 5.54 eV that confirms the S 2− state [ 34 ].…”

Section: Resultsmentioning

confidence: 99%

Impact of 1,8-Diiodooctane (DIO) Additive on the Active Layer Properties of Cu2ZnSnS4 Kesterite Thin Films Prepared by Electrochemical Deposition for Photovoltaic Applications

et al. 2023

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Kesterite Cu2ZnSnS4 (CZTS) thin films using various 1,8-diiodooctane (DIO) polymer additive concentrations were fabricated by the electrochemical deposition method. The optical, electrical, morphological, and structural properties of the CZTS thin films synthesized using different concentrations of 5 mg/mL, 10 mg/mL, 15 mg/mL, and 20 mg/mL were investigated using different techniques. Cyclic voltammetry exhibited three cathodic peaks at −0.15 V, −0.54 V, and −0.73 V, corresponding to the reduction of Cu2+, Sn2+, Sn2+, and Zn2+ metal ions, respectively. The analysis of the X-ray diffraction (XRD) pattern indicated the formation of the pure kesterite crystal structure, and the Raman spectra showed pure CZTS with the A1 mode of vibration. Field emission scanning electron microscopy (FE-SEM) indicated that the films are well grown, with compact, crack-free, and uniform deposition and a grain size of approximately 4 µm. For sample DIO-20 mg/mL, the elemental composition of the CZTS thin film was modified to Cu:Zn:Sn: and S = 24.2:13.3:12.3:50.2, which indicates a zinc-rich and copper-poor composition. The X-ray photoelectron spectroscopy (XPS) results confirmed the existence of Cu, Sn, Zn, and S elements and revealed the element oxidation states. The electrochemical deposition synthesis increased the absorption of the CZTS film to more than 104 cm−1 with a band gap between 1.62 eV and 1.51 eV. Finally, the photovoltaic properties of glass/CZTS/CdS/n-ZnO/aluminum-doped zinc oxide (AZO)/Ag solar cells were investigated. The best-performing photovoltaic device, with a DIO concentration of 20 mg/mL, had a short-circuit current density of 16.44 mA/cm2, an open-circuit voltage of 0.465 V, and a fill factor of 64.3%, providing a conversion efficiency of 4.82%.

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“…The reduction in stacking faults and crystal defects are responsible for such high absorption coefficient. Due to the low band gap of SnSe, the material have high absorption coefficient [9,10]. This is because of reduction in stacking faults and lattice defects as film thickness increased; thus, an improvement in film crystallinity [12].…”

Section: Resultsmentioning

confidence: 99%

ANNEALED TIN SELENIDE (SnSe) THIN FILM MATERIAL FOR SOLAR CELL APPLICATION

SHAHZAD¹,

ALI²,

HAQ³

et al. 2020

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The main theme of this work is the synthesis and characterization of SnSe thin film for photovoltaic application. 2-micron Tin Selenide thin film is deposited on clean glass substrate (4cm×4cm) by thermal evaporation technique. The sample is annealed for one hour at a temperature of 350○C . Optical characterization is achieved for the calculation of transmittance, reflection, reflection and absorbance. 1.2 eV band gap is calculated which confirmed the semiconductor nature of thin film. Relatively high resistance (5MΩ) of the sample is calculated using I-V characteristics.

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Formation of SnSSe thin films by heat treatment of SnS thin films in S/Se atmosphere

Cited by 9 publications

References 39 publications

Enhanced Opto‐Electrical Properties of Chalcogenide‐Rich Tin Selenide Thin Film after Incorporating Sulfur Yielding Tin Sulfoselenide

Enhanced Opto‐Electrical Properties of Chalcogenide‐Rich Tin Selenide Thin Film after Incorporating Sulfur Yielding Tin Sulfoselenide

Impact of 1,8-Diiodooctane (DIO) Additive on the Active Layer Properties of Cu2ZnSnS4 Kesterite Thin Films Prepared by Electrochemical Deposition for Photovoltaic Applications

ANNEALED TIN SELENIDE (SnSe) THIN FILM MATERIAL FOR SOLAR CELL APPLICATION

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