Formation of Sn‐Induced Nanowires on Si(557)

Jäger, Monika; Pfnür, H.; Fanciulli, Mauro; Weber, A. P.; Dil, J. Hugo; Tegenkamp, Christoph

doi:10.1002/pssb.201900152

Cited by 2 publications

(1 citation statement)

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“…The growth of Sn thin films has been achieved on a number of substrates, including Si [ 37–41 ] and Ge. [ 42–45 ] The stabilization of the α‐phase up to high temperatures has been reported for the near‐lattice‐matched substrates InSb(001) [ 46,47 ] and Sb‐terminated InSb(111)B.…”

Section: Sample Preparation and Characterizationmentioning

confidence: 99%

Cryogenic Temperature Growth of Sn Thin Films on Ferromagnetic Co(0001)

Gładczuk

Gladczuk

Dłuźewski

et al. 2022

Adv Materials Inter

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Topological electronic materials hold great promise for revolutionizing spintronics, owing to their topological protected, spin‐polarized conduction edge or surface state. One of the key bottlenecks for the practical use of common binary and ternary topological insulator materials is the large defect concentration that leads to a high background carrier concentration. Elemental tin in its α‐phase is a room temperature topological semimetal, which is intrinsically less prone to defect‐related shortcomings. Recently, the growth of ultrathin α‐Sn films on ferromagnetic Co surfaces has been achieved; however, thicker films are needed to reach the 3D topological Dirac semimetallic state. Here, the growth of α‐Sn films on Co at cryogenic temperatures was explored. Very low‐temperature growth holds the promise of suppressing undesired phases, alloying across the interfaces, as well as the formation of Sn pillars or hillocks. Nevertheless, the critical Sn layer thickness of ≈3 atomic layers, above which the film partially transforms into the undesired b‐phase, remains the same as for room‐temperature growth. From ferromagnetic resonance studies, and supported by electron microscopy, it can be concluded that for cryogenic Sn layer growth, the interface between Sn and Co remains sharp and the magnetic properties of the Co layer stay intact.

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Section: Sample Preparation and Characterizationmentioning

confidence: 99%