Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon

Ganagona, Naveengoud; Vines, Lasse; Monakhov, Edouard; Svensson, B. G.

doi:10.4028/www.scientific.net/ssp.205-206.213

Cited by 2 publications

(2 citation statements)

References 14 publications

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“…The formation of H(0.24) exhibits similar behavior to that of V 2 O(þ/0) and a possible identification as V 3 O(þ/0) has been put forward. 13,21 Similar to V 2 (þ/0) and in accordance to previous studies, annealing of the V 2 (À/0) peak is observed in the ODLTS spectra ( Fig. 1) after the isothermal heat treatments, and a new level, assigned to V 2 O(À/0), occurs at E c À0.46 eV.…”

Section: Resultssupporting

confidence: 89%

Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion

Ganagona

Vines

Monakhov

et al. 2014

Journal of Applied Physics

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In this work, a comprehensive study on the transition of divacancy (V 2 ) to divacancy-oxygen (V 2 O) pairs in p-type silicon has been performed with deep level transient spectroscopy (DLTS). Czochralski grown, boron doped p-type, silicon samples, with a doping concentration of 2 Â 10 15 cm À3 and oxygen content of 7.0 6 1.5 Â 10 17 cm À3 , have been irradiated with 1.8 MeV protons. Isothermal annealing at temperatures in the range of 200 C-300 C shows a close to one-to-one correlation between the loss in the donor state of V 2 and the formation of the donor state of V 2 O, located at 0.23 eV above the valence band edge. A concurrent transition takes place between the single acceptor states of V 2 and V 2 O, as unveiled by injection of electrons through optical excitation during the trap filling sequence of the DLTS measurements. Applying the theory for diffusion limited reactions, the diffusivity of V 2 in the studied p-type samples is determined to be (1.5 6 0.7) Â 10 À3 exp[À(1.31 6 0.03) eV/kT] cm 2 /s, and this represents the neutral charge state of V 2 . Further, the data seem to favor a two-stage diffusion mechanism involving partial dissociation of V 2 , although a one-stage process cannot be fully excluded. V C 2014 AIP Publishing LLC.

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Section: Resultssupporting

confidence: 89%

Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion

Ganagona

Vines

Monakhov

et al. 2014

Journal of Applied Physics

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“…In Ref. 12, two levels at E v þ 0.24 eV and E v þ 0.11 eV levels were resolved after annealing of proton-irradiated ptype Cz samples, supporting their assignment as the single and double donor states of V 3 O, respectively, made in Ref. 7.…”

Section: Introductionsupporting

confidence: 61%

Formation kinetics of trivacancy-oxygen pairs in silicon

Ganagona

Vines

Monakhov

et al. 2014

Journal of Applied Physics

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The formation of donor and acceptor states of the trivacancy-oxygen (V 3 O) complex in p-and ntype silicon, respectively, has been studied in detail by means of deep level transient spectroscopy. The samples were irradiated with 1.8 MeV protons, and it was found that acceptor and donor states of V 3 disappear at annealing temperatures below 200 C, with a transition from the metastable (110) planar configuration to the stable fourfold coordinated configuration. Annealing above 200 C unveils the formation of two levels with energy positions at E c À 0.34 eV and E c À 0.46 eV in n-type samples and two levels at E v þ 0.24 eV and E v þ 0.11 eV in p-type samples. (E c and E v denote the conduction and valence band edge, respectively.) The amplitudes of these levels show an almost one-to-one correlation with those of the V 3-related levels occurring after irradiation. In accordance with recent reports in the literature, the emerging levels are ascribed to the V 3 O complex; single and double negative charge states in n-type samples and single and double positive charge states in p-type samples. By undertaking isothermal formation of the V 3 O complex in p-type samples which exhibits first-order kinetics, the diffusivity of V 3 in the neutral charge state is determined to be (8.5 6 3.5) Â 10 À2 exp [À(1.50 6 0.04) eV/kT] cm 2 /s. V

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Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon

Cited by 2 publications

References 14 publications

Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion

Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion

Formation kinetics of trivacancy-oxygen pairs in silicon

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