Formation of SiH bonds on the surface of microcrystalline silicon covered with SiOx by HF treatment

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: surface preparation, passivation and functionalization

“…1). [75][76][77][78] Hydrogenated silicon surfaces are attractive to work with because of their ease of preparation, 78 their relative stability in air 79,80 and during brief water ring procedures, 31,76 and their lack of appreciable reactivity toward a range of common solvents (including acetonitrile, 81 diethyl ether, 46 chlorobenzene, 82 hexane, 83 toluene 84 and mesitylene 85,86 preparation of covalent organic layers by wet chemical methods. 87 Notable exceptions to the typically straightforward conditions are [2+2] and [4+2] cycloaddition reactions under 'dry' UHV conditions.…”

Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions

“…Although from the thermodynamic point of view, a F passivated Si surface is more stable, 10 research shows that kinetics plays a more important role in the surface hydrogen passivation. 11,12 Since Ge is next to Si in the same column, and has electronegativity very close to that of Si, 13 10% HCl solutions were also used to clean the Ge(100) surfaces. is achieved.…”

Study of post-deposition contamination in low-temperature deposited polysilicon films

“…These two bands are respectively attributed to =SiH 2 groups passivating the GB and -(SiH 2 ) 2 -groups interconnecting different grains [5]. This indicates that HWCVD allows the incorporation of H in the film during the growth process.…”

“…First, the two narrow stretching bands observed at 2100 and 2083 cm -1 in as-deposited sample disappeared, and a wider band centered at 2100 cm -1 arose. In addition, a wide band appeared at 2250 cm -1 , which is attributed to Si-H bonds when Si atoms are bonded to O atoms [5].…”