Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy

Umeno, K.; Furukawa, Yukio; Urakami, Noriyuki; Noma, R.; Mitsuyoshi, S.; Wakahara, Akihiro; Yonezu, Hiroo

doi:10.1016/j.physe.2009.11.014

Cited by 15 publications

(10 citation statements)

References 31 publications

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“…eV nearly agrees with PL peak energy 1.39 eV at RT for self-assembled In 0.5 Ga 0.5 As 0.99 N 0.01 /GaP QDs [15]. Figure 5 shows N and In composition dependence of ΔE and the transition energy for self-assembled InGaAsN/GaP QDs with various In and N compositions( In: 30~70%, N: 0~3%).…”

Section: Analysis Methodssupporting

confidence: 67%

“…The thickness of wetting layer is 1 ML. The size of self assembled QD islands determined by atomic force microscopy (AFM) and transmission electron microscopy (TEM) were 4 nm in height and 20 nm in width by assuming square pyramids [15]. The strain distribution and electron/heavy hole quantum levels were analyzed by finite element method [16].…”

Section: Analysis Methodsmentioning

confidence: 99%

“…Self-assembled InGaAsN/GaP quantum dots (QDs) by Stranski-Krastanov growth mode are one of the attractive candidates for the active layers [15]. The photoluminescence (PL) peak energy for self-assembled In 0.5 Ga 0.5 As 0.99 N 0.01 /GaP QD was estimated by assuming the quantum well (QW) structure.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of quantum levels for self‐assembled InGaAsN/GaP quantum dots

Fukami

Umeno

Furukawa

et al. 2010

Phys. Status Solidi (c)

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We develop the design method of luminescence device with the strained quantum dots (QDs) on Si using a theoretical analysis on realistic structure. We have calculated numerically the first electron and heavy‐hole quantum levels of self‐assembled InGaAsN/GaP QDs using the finite element method, the model‐solid theory and the band‐anticrossing model. The calculation results indicate that N incorporation into InGaAs QDs drastically reduces the conduction band minimum (∼120 meV/N at%), and that it is shown enough energy difference between the first electron‐quantum level and GaP X‐state when N composition is 1∼2%. For self‐assembled In0.5Ga0.5As0.99N0.01/GaP QDs, the calculated transition energy at room temperature (RT) nearly matches with the measured photoluminescence (PL) peak energy. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Analysis Methodssupporting

confidence: 67%

Section: Analysis Methodsmentioning

confidence: 99%

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Analysis of quantum levels for self‐assembled InGaAsN/GaP quantum dots

Fukami

Umeno

Furukawa

et al. 2010

Phys. Status Solidi (c)

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“…Dilute nitrides such as GaPN [4], InGaPN [5] and GaAsPN [6] have been expected as materials for light emitting device on Si, since these materials can be lattice-matched to Si and have a quasi direct band gap. Recently, strained GaNAs(P) quantum wells [7][8][9] and self assembled GaInNAs quantum dots [10] with (B)GaP(N) barriers have been intensively studied for laser operation on Si. In order to realize a practical laser structure such as a separate confinement heterostructure (SCH), a cladding layer, which can lattice-matched to Si, is required.…”

Section: Introductionmentioning

confidence: 99%

Growth of AlPN by solid source molecular beam epitaxy

Kawai

Yamane

Furukawa

et al. 2010

Phys. Status Solidi (c)

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We reported the growth of AlPN by solid source molecular beam epitaxy (MBE). N content in AlPN showed less temperature dependence than GaPN. The surface morphology degraded at lower growth temperatures even though the N contents were almost the same. A cross‐sectional transmission electron microscopy (X‐TEM) image revealed that the surface roughening leads to stacking faults. In the case of films grown above 600 °C, atomically smooth surface was obtained. A dislocation‐free AlPN layer with abrupt GaP/AlPN heterointerface was obtained (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Pioneering experiments on (In,Ga)AsN/ GaP QDs were performed by Umeno et al in 2010, where the first low intensity room temperature Photoluminescence (PL) was demonstrated on a 5-stack QDs sample. 13 In 2011, Urakami et al proposed to use a Rapid Thermal Annealing (RTA) procedure to increase the structural quality and enhance the PL efficiency for the QDs. 14 Finally, Fukami et al predicted a direct bandgap optical transition up to 1100 nm using a 50% In composition and an N composition between 1% and 2% with the Band Anti-Crossing model.…”

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confidence: 99%