Abstract:Flash lamp annealing (FLA) is a short-time annealing technique which can heat and crystallize µm-orderthick amorphous silicon (a-Si) films without inducing serious thermal damage onto whole glass substrates thanks to its proper fluence on the order of several tens of J/cm 2 and millisecondorder duration. The FLA of a-Si films leads to lateral explosive crystallization (EC), driven by the release of latent heat, with a lateral crystallization speed on the order of m/s. When we use electron-beam-(EB-) evaporated… Show more
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