Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories

Shimanoe, Kohei; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi

doi:10.1587/transele.e92.c.616

Cited by 30 publications

(29 citation statements)

References 3 publications

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“…The application of high density nanometer-sized dots to a floating gate (FG) has been attracting much attention because of several advantages over a conventional single planar FG [1][2][3][4][5][6]. Essentially, the charge storage in individual nanodots leads to superior charge retention against gate oxide degradation.…”

Section: Intorductionmentioning

confidence: 99%

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

Miyazaki¹,

Morisama²,

Nakanishi³

et al. 2009

MRS Proc.

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We have proposed and fabricated a hybrid nanodots floating gate (FG), in which Si quantum dots (QDs) as charge injection/emission nodes and NiSi nanodots as charge storage nodes are stacked with an ultrathin SiO 2 interlayer, to satisfy both large memory window and multivalued capability. In this study, Si-QDs with an areal density of ~3x10 11 cm -2 were formed on ultrathin SiO 2 layer by controlling SiH 4 chemical vapor deposition (CVD) and NiSi nanodots were prepared by full-silicidation of Si-QDs promoted with remote H 2 -plasma exposure after Ni evaporation. From capacitance-voltage(C-V) characteristics of MOS capacitors with a NiSi nanodots/Si-QDs hybrid FG, stable storage of many charges in the deep potential well of each NiSi nanodot was confirmed. Also, by applying pulsed gate biases, stepwise charge injection to and emission from NiSi nanodots through discrete energy states in Si-QDs were demonstrated. In addition, by 1310nm (~0.95eV) light irradiation, a distinct optical response in C-V characteristics was detected, which can be interpreted in terms of the shift of charge centroid in the hybrid FG stack due to transfer of photoexcited electrons from NiSi-nanodots to the Si-QDs.

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Section: Intorductionmentioning

confidence: 99%

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

Miyazaki¹,

Morisama²,

Nakanishi³

et al. 2009

MRS Proc.

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“…The replacement of a planar floating gate (FG) with nanodots FG in MOS memories has been attracting much attention because of its potential advantages in charge storage characteristics [1][2][3][4][5][6]. In general, charge storage in individual nanodots is practically expected to provide superior charge retention and endurance characteristics against degradation of gate oxide reliability.…”

Section: Introductionmentioning

confidence: 99%

Charge Storage Characteristics of Hybrid Nanodots Floating Gate

Miyazaki¹,

Makihara²,

Ikeda³

2009

ECS Trans.

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The hybrid nanodots structure in which NiSi nanodots were stacked on Si-QDs with a very thin interlayer oxide was fabricated successfully and implemented to a MOS capacitor as a floating gate. The multiple charge storage in a deep potential well of NiSi nanodots and stepwise progression of charging and discharging in the hybrid nanodots FG have been demonstrated. The discrete energy states of the Si-QDs may play a role on the multistep electron injection to and emission from the NiSi nanodots.

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“…The charging and discharging characteristics of metallic NDs through an ultrathin oxide layer depend on their electrostatic potential. So far, we reported that Ni-, Co-, Pt-, and Fe-NDs with an areal density as high as ~10 11 cm −2 were formed on ultrathin SiO 2 by exposing an ultrathin metal layer to a remote H 2 plasma (H 2 -RP) without external heating, and demonstrated their charge storage properties 35 36 37 38 39 40 . More recently, we reported on the formation of magnetic NDs made of CoPt alloy formed by exposing a bi-layer metal stack to a remote H 2 plasma (H 2 -RP) and characterized their magnetization properties 41 .…”

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confidence: 99%

Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature

Makihara

Kato

Kabeya

et al. 2016

Sci Rep

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Spin transistors have attracted tremendous interest as new functional devices. However, few studies have investigated enhancements of the ON/OFF current ratio as a function of the electron spin behavior. Here, we found a significantly high spin-dependent current ratio—more than 102 at 1.5 V—when changing the relative direction of the magnetizations between FePt nanodots (NDs) and the CoPtCr-coated atomic force microscope (AFM) probe at room temperature. This means that ON and OFF states were achieved by switching the magnetization of the FePt NDs, which can be regarded as spin-diodes. The FePt magnetic NDs were fabricated by exposing a bi-layer metal stack to a remote H2 plasma (H2-RP) on ~1.7 nm SiO2/Si(100) substrates. The ultrathin bi-layers with a uniform surface coverage are changed drastically to NDs with an areal density as high as ~5 × 1011 cm−2. The FePt NDs exhibit a large perpendicular anisotropy with an out-of-plane coercivity of ~4.8 kOe, reflecting the magneto-crystalline anisotropy of (001) oriented L10 phase FePt. We also designed and fabricated double-stacked FePt-NDs with low and high coercivities sandwiched between an ultra-thin Si-oxide interlayer, and confirmed a high ON/OFF current ratio when switching the relative magnetization directions of the low and high coercivity FePt NDs.

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Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories

Cited by 30 publications

References 3 publications

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

Charge Storage Characteristics of Hybrid Nanodots Floating Gate

Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature

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