Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C

Lindström, J. L.; Hallberg, T.; Liberski, P.; Svensson, B. G.; Мурин, Л. И.; Маркевич, В. П.

doi:10.4028/www.scientific.net/msf.258-263.367

Cited by 24 publications

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“…In order to increase the intensity of the rather weak dimer related vibrational modes in the as-grown material, the samples were electron irradiated at about 350 ± C, using 2 MeV e-irradiation. [8,10]. However, the spectrum for the mixed-isotopic sample (c) shown in Fig.…”

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confidence: 98%

First Stage of Oxygen Aggregation in Silicon: The Oxygen Dimer

et al. 1998

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The structure and dynamic properties of the interstitial oxygen dimer in silicon are found using a combination of infrared spectroscopy and ab initio modeling. We find that the stable dimer consists of a pair of inequivalent weakly coupled interstitial oxygen atoms separated by a Si-Si bond. Two high frequency modes are decoupled in one 16 O-18 O combination but are strongly mixed in the other combination. A third lower lying mode involves the compression of the Si-Si bond joining the oxygen atoms and gives distinct modes in the mixed 16 O-18 O case. [S0031-9007(98)07293-7]

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confidence: 98%

First Stage of Oxygen Aggregation in Silicon: The Oxygen Dimer

et al. 1998

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“…Strong differences between the TSC spectra of the diodes are seen in the low temperature range (6-60 K): (a) the signal labeled IO 2 is only observed in the MCz diode. The O 2 is known to be a precursor for the formation of shallow donors like the early thermal double donors TDD1 and TDD2 [17,18]; (b) at very low temperatures the spectra recorded for the MCz and the EPI-ST diode show a ''tail'' in the TSC current which is much more pronounced in the MCz than in the EPI-ST diode. This tail might be attributed to the existence of the BD center in a different configuration [11].…”

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confidence: 97%

Radiation damage studies on MCz and standard and oxygen enriched epitaxial silicon devices

Fretwurst¹,

Hönniger²,

Kramberger

et al. 2007

Nuclear Instruments and Methods in Physics Research Section A:

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“…It is known that irradiation at elevated temperatures enhances the O 2i concentration and this is a likely reason for such a high concentration of the E v +0.39 eV level after hot irradiation. [50] In order to reach a more comprehensive understanding of the E v +0.39 eV level, PL studies were performed together with DLTS. In the experiments, the same samples have been used for both PL and DLTS measurements, as discussed in paper VII.…”

Section: Formation Of E V +039 Ev Levelmentioning

confidence: 99%

Formation of donor and acceptor states of the divacancy–oxygen centre in p-type Cz-silicon

Ganagona¹,

Raeissi²,

Vines³

et al. 2012

J. Phys.: Condens. Matter

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The formation of the divacancy-oxygen centre (V(2)O) in p-type Czochralski-grown silicon has been investigated by means of deep level transient spectroscopy (DLTS). The donor state (+/0) of V(2)O is located at ~E(v) + 0.23 eV (E(v) denotes the valence band edge) and emerges during heat treatment above 200 °C at the expense of the divacancy centre (V(2)). A concurrent transition takes place between the single-acceptor states of V(2) and V(2)O, as unveiled by the injection of electrons through optical excitation during the trap filling sequence of the DLTS measurements. Further, a defect with an energy level at ~E(v) + 0.09 eV evolves in close correlation with the growth of V(2)O but at a factor of ~5-6 lower in concentration. In the literature, the E(v) + 0.09 eV level has previously been attributed to a double-donor state of V(2)O but this assignment can be ruled out by the present data favouring a complex formed between migrating V(2) centres and a competing interstitial oxygen trap. In addition, a level at ~E(v) + 0.24 eV occurs also during the heat treatment above 200 °C and is tentatively assigned to the trivacancy-oxygen centre (V(3)O).

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Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C

Cited by 24 publications

References 0 publications

First Stage of Oxygen Aggregation in Silicon: The Oxygen Dimer

First Stage of Oxygen Aggregation in Silicon: The Oxygen Dimer

Radiation damage studies on MCz and standard and oxygen enriched epitaxial silicon devices

Formation of donor and acceptor states of the divacancy–oxygen centre in p-type Cz-silicon

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