Formation of ordered nanocluster arrays by self-assembly on nanopatterned Si(100) surfaces

Winningham, Thomas A.; Gillis, H. P.; Choutov, D. A.; Martin, K. P.; Moore, Jon T.; Douglas, Kenneth T.

doi:10.1016/s0039-6028(98)00115-0

Cited by 33 publications

(18 citation statements)

References 30 publications

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“…However, e.g., in the context of structured semiconductor surfaces [17][18][19], microfluidics [20][21][22][23][24], and templates for the selfassembly of small particles [25][26][27] highly regular nonflat lateral surface structures can be produced. But both the theoretical understanding of the local wetting phenomena in such structures [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42] as well as corresponding experimental investigations [43,44] are still in their infancies [45].…”

Section: Introductionmentioning

confidence: 99%

Filling transition for a wedge

1999

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We study the formation and the shape of a liquid meniscus in a wedge with opening angle 2 ϕ which is exposed to a vapor phase. By applying a suitable effective interface model, at liquid-vapor coexistence and at a temperature T ϕ we find a filling transition at which the height of the meniscus becomes macroscopically large while the planar walls of the wedge far away from its center remain nonwet up to the wetting transition occurring at T w > T ϕ .Depending on the fluid and the substrate potential the filling transition can be either continuous or discontinuous. In the latter case it is accompanied by a owprefilling line extending into the vapor phase of the bulk phase diagram and describing a transition from a small to a large, but finite, meniscus height.The filling and the prefilling transitions correspond to nonanalyticities in the surface and line contributions to the free energy of the fluid, respectively.

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Section: Introductionmentioning

confidence: 99%

Filling transition for a wedge

1999

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“…29 Recently LE4 has been used to transfer a hexagonal array of 18-nm holes on a 22-nm lattice constant from a biologically derived pattern into Si(100). 30 High resolution cross-sectional transmission electron microscopy showed…”

Section: Experimental Methodsmentioning

confidence: 99%

Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)

Gillis

Christopher

Martin

et al. 1999

MRS Internet j. nitride semicond. res.

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Fabricating device structures from the III-N wide bandgap semiconductors requires anisotropoic dry etching processes that leave smooth surfaces with stoichiometric composition after transferring high-resolution patterns with vertical sidewalls. The purpose of this article is to describe results obtained by a new low-damage dry etching technique that provides an alternative to the standard ion-enhanced dry etching methods in meeting these demands for processing the III-N materials.

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“…Therefore, we are restricted to fine-grained metals such as Ti, Cr, W, or V. Additionally, because these metals oxidize and expand when exposed to air, the amount of masking material, and thus the ultimate thickness of the mask, is limited by the need to avoid blocking the crystal's pores when the oxide forms. In previous work, 4,8 we have used a 1.2 nm Ti film ͑3.5 nm TiO 2 film upon exposure to air͒ as a mask material, so we began our work with the ICP instrument ͑Surface Technology Systems, MESC Multiplex ICP͒ using Ti-coated bionanomasks on silicon substrates and SF 6 -based etch chemistry. Unfortunately, preliminary experiments revealed that the fluorine-containing plasma destroys the TiO 2 coating before the pattern can be faithfully transferred to the substrate.…”

Section: A Mask Materials Selection and Anisotropy Concernsmentioning

confidence: 99%

“…Because dot nucleation is random, two-dimensional arrays of quantum dots fabricated by strained growth typically exhibit little order. 1,2 Prepatterning surfaces using nanoimprinting 3 or direct etching, 4 for example, has been shown to greatly improve the spatial uniformity of dot nucleation. More recently, selective area growth in patterns created by block copolymer lithography has achieved a high degree of uniformity in the spatial position of semiconductor dots with diameters estimated to be 23 nm.…”

Section: Introductionmentioning

confidence: 99%

“…We have demonstrated pattern transfer to a Si͑100͒ substrate using our bionanomasks and the minimal damage dry etch technique of lowenergy electron enhanced etching ͑LE4͒ and have fabricated an array of 5-nm-diam nanoclusters by self-assembly on the nanopatterned Si surface. 4 Unfortunately, the LE4 technique is not commercially available at this time.…”

Section: Introductionmentioning

confidence: 99%

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Pattern transfer from a biomolecular nanomask to a substrate via an intermediate transfer layer

Winningham

Whipple

Douglas

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have achieved pattern transfer from a biomolecular nanomask (bionanomask) to a crystalline Si substrate using inductively coupled plasma etching. This nanopatterning makes use of an intermediate transfer layer (ITL) between the masks and the substrate. The ITL is a layer of a resist-like material into which the bionanomask pattern is transferred before it is then transferred to the substrate. We report a method for using bionanomasks deployed on an ITL of ultrathin (<10 nm) nitrocellulose to pattern a Si(100) substrate with either a two-dimensionally ordered array of 10-nm-diam holes or alternatively a two-dimensionally ordered array of 10-nm-diam metal dots. Both arrays possess hexagonal symmetry and a lattice constant of 22 nm. In the case of nanodot array fabrication, the ITL thus facilitates the direct replication of the inverse pattern of the bionanomask in the form of ordered metal nanodots without the need for adsorbate surface diffusion and nucleation steps.

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Formation of ordered nanocluster arrays by self-assembly on nanopatterned Si(100) surfaces

Cited by 33 publications

References 30 publications

Filling transition for a wedge

Filling transition for a wedge

Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)

Pattern transfer from a biomolecular nanomask to a substrate via an intermediate transfer layer

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