Formation of nitrogen structures by ammoxidation of organic materials: FT-IR/PAS studies

Catalytic activity of Pd/CN systems in hydrogenation of styrene

“…The material with the highest degree of coalification contains the greatest amount of carbon and the smallest amount of total oxygen and sulfur, being the components of volatile substances typical of the materials of organic origin [9][10]. As evidenced earlier, the procedure of nitrogen enrichment leads to considerable changes in the contents and proportions of particular elements [9][10][11]. The greatest amount of nitrogen was introduced to a sample of brown coal as a result of ammoxidation accompanied by the removal of the organic materials leading to a reduction in the amount of oxygen and sulfur.…”

“…Ammoxidation (introducing of nitrogen into the carbonaceous materials structure) and carbonization were carried out according to procedures described in detail in [9][10][11][12]. Activation by steam was conducted at 1073 K for 1.5 h. Chemical composition of the samples investigated was established on an Elemental Vario ELIII microanalyzer.…”

Activity of TiO2 deposited by the CVD method on ammoxidized surface of a carbonaceous material in hydrogenation of styrene

“…The catalysts used in the experiments were high-area modified active carbon covered with chemical-vapour-deposited (CVD) TiO 2 ultra fine powder by the gas-phase of pyrolysis [Ti 6 O 6 (O i Pr) 6 (O 2 C t Bu) 6 ] [12,13]. The above precursor and activated carbon grains used as support were placed in a horizontal CVD reactor described elsewhere and heated by means of a resistance furnace in the temperature range of 673-793 K controlled by a thermocouple located inside of the reactor, in argon atmosphere under 3 mbar, for 60 min.…”

“…The type of nitrogen functional groups present on the surface of carbonaceous materials determines also its anion and cation exchange properties [1,3]. It has been established earlier that the efficient method of enrichment in nitrogen is ammoxidation, involving a simultaneous oxidation of the precursor [1][2][3][4][5][6][7].…”

“…In our works we have focused on the study of [Ti 6 O 6 (O i Pr) 6 (O 2 C t Bu) 6 ] expected to be a promising CVD precursor for the deposition of TiO 2 nanolayers, in the range of 673-873 K [11][12][13]. The deposition of pure films with a lower content of impurities than 2% has been achieved using Ar/H 2 O as a carrier gas.…”