Formation of nickel disilicide using nickel implantation and rapid thermal annealing

Abstract

Transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS), and x-ray photoemission spectroscopy (XPS) have been used to investigate the nucleation, growth, and ripening behavior of nickel-disilicide precipitates formed by Ni implantation in an amorphous-Si layer on (100) Si and followed by a two-step annealing treatment. The TEM and XPS results show that amorphous-disilicide precipitates are formed in a depth of ϳ21 nm in the amorphous-Si layer when pre-annealed at 380°C for 30 sec. It is also shown that the second-step annealing at temperatures in the range of 450-600°C causes the amorphous precipitates to transform to randomly oriented crystalline ones embedded in the amorphous-Si layer. Annealing above 550°C is shown to induce the crystallization of amorphous Si by solid-phase epitaxial growth (SPEG). It is further shown that, in a prolonged annealing at high temperatures, the disilicide has dissolved and reprecipitated on the Si surface. Based on the roles of the silicide-mediated crystallization (SMC), the dissolution and reprecipitation of silicides, and SPEG, possible mechanisms are given to explain how the surfacedisilicide islands are formed during annealing at temperatures of 550-950°C.

Integration and Applications of Electrochemically-Etched Silicon Nanowires

“…NiSi can be formed by decomposition of silane on nickel surfaces or in a series of procedures including deposition of nickel on single crystal silicon wafer or nanowires followed by thermal annealing treatment and removal of excessive metal by wet etching (15,16). In the same sense, the NiSi phase can also be formed with silicon nanowires by annealing single silicon nanowire with Ni reservoirs so that Ni can diffuse axially into the silicon nanowire (17).…”

Test Methods for Measuring Bulk Copper and Nickel in Heavily Doped p-Type Silicon Wafers

“…[5][6][7][8][9][10][11][12][13][14][15][16] However, both detection and removal of bulk Cu and Ni impurities in the heavily doped p-type silicon wafers are complicated due to the possibility of interaction of Cu with boron and formation of Ni silicides. [17][18][19][20][21][22][23][24] The detection of bulk Cu and Ni impurities below 1 ϫ 10 13 atoms/cm 3 in the heavily doped p-type silicon wafers is challenging, particularly in high-volume manufacturing ͑HVM͒. All electrical characterization methods, which are successfully used for the lightly doped p-type silicon wafers, are not applicable for the heavily doped p-type silicon wafers.…”