Formation of nanostructures on the surface of KTP single crystals by argon cluster ion beam

Abstract

In this work, the surface of potassium titanyl phosphate (KTP) single crystals has been processed by argon cluster ions having low energy per atom E/Nmean = 12.5 eV/atom. The formation of periodic nanostructures has been studied using atomic force microscopy (AFM) and the power spectral density (PSD) functions. To evaluate the processing efficiency, the dependence of the etching rate of KTP on the incident angles of cluster ions has been investigated. It is shown that the average etching rate 〈Vetch〉 varies between 0.46 and 1.1 nm/min with an incident angle change from 0° to 70°.

Sputtering and ripples formation by gas cluster ions on LiNbO-=SUB=-3-=/SUB=- crystal

“…It was believed that the Y monotonously falls with increasing angle [38]. However, at least for materials such as SiO 2 , KTiOPO 4 [31] and LiNbO 3 it is now known that this dependence has a pronounced maximum at non-zero angles. Thus, at high fluences (Fig.…”

“…Recently, studies using a single crystal of potassium titanyl phosphate (KTiOPO 4 , KTP) [31,32] have shown that ripples occur in a low-energy irradiation mode (12.5 eV/atom) and do not occur at an energy of 110 eV/atom. The work of Yamada et al [33] demonstrated the growth of ripples arising on SiO 2 film on silicon, with an increase in fluence.…”