Formation of Nanosized Films of Chromium Silicides on Silicon Surface

Isaev, Makhmudhodzha; Gaibov, Abdumalik; Eshkulov, Abdigani; Saidakhmetov, P. A.

doi:10.1007/978-3-030-80946-1_93

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…Currently, transition metal silicides are becoming the base material for new, promising technological schemes of future generations due to their resistance to aggressive media and high-temperature treatments [6][7][8][9]. Therefore, a comprehensive study of the mechanism of the entry of impurities into the bulk of the crystal and their interaction with both the matrix atoms of the crystal and technological impurities is relevant.…”

Section: Introductionmentioning

confidence: 99%

Study of the Mobility and Electrical Conductivity of Chromium Silicide

Isaev,

Atamirzaev,

Mamatkulov

et al. 2023

East Eur. J. Phys.

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The temperature dependence of the mobility in chromium silicides in the temperature range of 80 ÷ 780 K was studied. The mobility gradually increases to a temperature of 350 K, then it saturates in the temperature range of 350 ÷ 450K, then gradually decreases. It is shown that the mobility depends on the scatter of charge of carriers on a crystal lattice, impurity ions, dislocations, and silicide inclusions. The frequency of collisions is proportional to T3/2, and the mobility varies with temperature as T-3/2. At high temperatures, phonons may be considered as “frozen” defects and collision frequency with its will proportional to T. The temperature dependences of the electrical conductivity in this temperature range were also studied. Areas with negative and positive temperature coefficients are revealed.

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Section: Introductionmentioning

confidence: 99%