Formation of nanoscale metallic structures on cupric nitride thin film surface by the impact of 200MeV Au15+ ions

Ghosh, Santanu; Sivakumar, V.; Tripathi, A.; Khan, Saif A.; Ganesan, V.; Gupta, Ajay; Nath, Akashdeep; Avasthi, D.K.

doi:10.1016/j.nimb.2006.04.057

Cited by 7 publications

(12 citation statements)

References 15 publications

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“…12- Previous swift heavy ion (SHI) irradiation experiments carried out in similar samples ascertained that, as in our case, N is sputtered away, whereas Cu remains in the films [14,15]. The overall yield R(<p) i.e.…”

Section: Resultssupporting

confidence: 49%

“…Being metastable [6], copper nitride easily decomposes into metallic copper and nitrogen by different techniques such as: thermal annealing [6][7][8][9], and irradiation with electrons and laser pulses [10][11][12][13]. More recently, the effect of swift heavy ion (SHI) irradiation [14][15][16] in which the electronic stopping power (S e ) is some orders of magnitude higher than the nuclear stopping power (S n ) is being investigated. When the material decomposes, it simultaneously undergoes large changes in electrical resistivity and reflectivity which opens the possibility to use it for write-once optical data storage.…”

Section: Introductionmentioning

confidence: 99%

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Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Gordillo

González-Arrabal

Rivera

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Nitrogen sputtering yields as high as 10 4 atoms/ion, are obtained by irradiating N-rich-Cu 3 N films (N concentration: 33 ± 2 at.%) with Cu ions at energies in the range 10-42 MeV. The kinetics of N sputtering as a function of ion fluence is determined at several energies (stopping powers) for films deposited on both, glass and silicon substrates. The kinetic curves show that the amount of nitrogen release strongly increases with rising irradiation fluence up to reaching a saturation level at a low remaining nitrogen fraction (5-10%), in which no further nitrogen reduction is observed. The sputtering rate for nitrogen depletion is found to be independent of the substrate and to linearly increase with electronic stopping power (S e ). A stopping power (S t j,) threshold of ~3.5 keV/nm for nitrogen depletion has been estimated from extrapolation of the data. Experimental kinetic data have been analyzed within a bulk molecular recombination model. The microscopic mechanisms of the nitrogen depletion process are discussed in terms of a non-radiative exciton decay model. In particular, the estimated threshold is related to a minimum exciton density which is required to achieve efficient sputtering rates.

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Section: Resultssupporting

confidence: 49%

Section: Introductionmentioning

confidence: 99%

Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Gordillo

González-Arrabal

Rivera

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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show abstract

“…2.3. Other detailed investigations of topographical images observed from different thin films under heavy ion interaction [133][134][135][136][137] revealed that ion bombardment is responsible for surface effects depending on bombarding time, species and its energy too.…”

Section: First Observations Of Mixing By Swift Heavy Ionsmentioning

confidence: 99%

“…Nanograins were also identified at the top surface. The process is explained with in the framework of thermal spike model [136,598].…”

Section: Metal Nitridementioning

confidence: 99%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

245

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“…The ERDA technique yields systematically 5 at% less nitrogen than XPS when the influence of the argon ion sputtering effect is taken into account. Gosh et al [28] did a careful analysis of Cu 3 N with the ERDA technique and observed that the nitrogen content of the film decreased rapidly with time of irradiation. The nitrogen depletion of Cu 3 N during the analysis was attributed to the decomposition into copper and nitrogen by the ion impact.…”

Section: Bothmentioning

confidence: 99%