Formation of nanometer-scale structures using conventional optical lithography

Kim, Kyoung S.; Lee, Kyoung Nam; Roh, Yonghan

doi:10.1016/j.tsf.2007.03.077

Cited by 16 publications

(7 citation statements)

References 12 publications

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“…The critical dimensions of thin-film hybrid electronic microcircuits and microwave circuits / antennas are often much larger than tens of micrometers and require fabrication accuracy in the range of a few micrometers. Such features are extremely easy to achieve using classical semiconductor fabrication technology (Kim et al, 2008;Kim et al, 2009) based on a mask aligner and rigid photomasks. The latter are made of thin chromium film with high cohesion strength deposited on borosilicate glass or fused quartz (Wang et al, 2012).…”

Section: Introductionmentioning

confidence: 99%

Low-cost photomask fabrication using laser ablation

Legeay

Castel

Benzerga

et al. 2015

Journal of Materials Processing Technology

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A specific fabrication process has been developed to produce low-cost photomasks using standard consumer products. This process is based on an indirect route, using a numerically-controlled excimer laser (KrF) etching technique. It begins with RF-sputtering deposition of a titanium film (200 nm-thick) on float glass substrate. Then a nitrocellulose lacquer, serving as a self-developing resist, is spin-coated on titanium. It is ablated with partially-overlapping laser impacts and undergoes self-combustion under laser beam. Proper heat treatments are applied before and after laser ablation to circumvent smearing and adhesion problems. Finally the titanium layer is wet etched through the openings in the resist by dilute hydrofluoric acid. Both nitrocellulose lacquer characterization and laser parameters are discussed. The resolution achieved here (10 µm, limited by diffraction effects of the laser optics and by side heating of the resist due to the titanium film) is suitable for the fabrication of microwave devices.To confirm the suitability of the proposed process, several photomasks have been fabricated to pattern coplanar tunable stub resonators on ferroelectric KTa 0.5 Nb 0.5 O 3 thin films. The dielectric permittivity of the KTa 0.5 Nb 0.5 O 3 material is controlled by DC biasing. A 18 % tunability of the stub resonance frequency has been measured in X-band (close to 10 GHz), validating thereby the whole patterning process.

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Section: Introductionmentioning

confidence: 99%

Low-cost photomask fabrication using laser ablation

Legeay

Castel

Benzerga

et al. 2015

Journal of Materials Processing Technology

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“…Therefore, recently, some non-conventional techniques in combination with conventional photolithography have been proposed for the preparation of nano-electrodes, nano-gaps and other nano-scaled devices. These techniques include, for instance, a photoresist thermal reflow and shrinking 18 or photoresist ashing technique, 19 a shadow evaporation process, 20 a controlled size-reduction using the oxidation of Si [21][22][23] or laserassisted electrochemical etching, 24 chemical-mechanical polishing, 25 the decrease of separation between metallic electrodes by means of an electro-deposition from an electrolyte solution, 26 methods that utilize a sidewall structure, 27 a self-aligned plasma etching of a silicon dioxide layer and silicon substrate, 28 or a lateral, partial anodic oxidation of the side-edge of a photolithographicallystructured metallic film (e.g., Ti), 29 techniques that use a silicon-on-insulator structure, 30 for the fabrication of self-aligned nanostructures by means of conventional photolithography combined with patternsize reduction techniques has recently been proposed by the authors. 31 32 The method was experimentally demonstrated by patterning nanostructures with different sizes and layouts on a Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of 50 nm Silicon Nano-Gap Structures

Dhahi¹,

Hashim²,

Ahmed³

2011

sci adv mat

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A simple method for the fabrication of nano-gaps less than 50 nm by using conventional photolithography combined with patterned-size reduction techniques is presented. Silicon material is used to fabricate the nano-gap structure and gold is used for the electrode. Two chrome masks are proposed to complete this work, the first mask for the nano-gap pattern and a second mask for the electrode. The method is based on the control of the coefficients (temperature and time) with an improved pattern size resolution by thermal oxidation. With this technique, there are no principal limitations to fabricating nanostructures with different layouts down to several nanometers in dimension. In this work, the proposed method is experimentally demonstrated by preparing the nano-gaps on a Si-SiO 2 substrate down to dimensions of 50 nm. The optical characterization that is applied to check the nano-gap structure is by using the scanning electron microscope (SEM).

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“…Therefore, recently, some nonconventional techniques in combination with conventional photolithography have been proposed for the preparation of nanoelectrodes, nanogaps, and other nanoscaled devices. These techniques include, for instance, a photoresist thermal reflow and shrinking [18] or photoresist ashing technique [19], a shadow evaporation process [20], a controlled size reduction using the oxidation of Si [21][22][23] or laser-assisted electrochemical etching [24], chemical-mechanical polishing [25], the decrease of separation between metallic electrodes by means of an electrodeposition from an electrolyte solution [26], methods that utilize a sidewall structure [27], a selfaligned plasma etching of a silicon dioxide layer and silicon substrate [28], or a lateral, partial anodic oxidation of the side edge of a photolithographically structured metallic film (e.g., Ti) [29], and techniques that use a silicon-on-insulator structure [30].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Lateral Polysilicon Gap of Less than 50 nm Using Conventional Lithography

Dhahi

Hashim

Ali

et al. 2011

Journal of Nanomaterials

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We report a thermal oxidation process for the fabrication of nanogaps of less than 50 nm in dimension. Nanogaps of this dimension are necessary to eliminate contributions from double-layer capacitance in the dielectric detection of protein or nucleic acid. The method combines conventional photolithography and pattern-size reduction techniques. The gaps are fabricated on polysilicon-coated silicon substrate with gold electrodes. The dimensions of the structure are determined by scanning electron microscopy (SEM). An electrical characterization of the structures by dielectric analyzer (DA) shows an improved conductivity as well as enhanced permittivity and capacity with the reduction of gap size, suggesting its potential applications in the detection of biomolecule with very low level of power supply. Two chrome Masks are used to complete the work: the first Mask is for the nanogap pattern and the second one is for the electrodes. An improved resolution of pattern size is obtained by controlling the oxidation time. The method expected to enable fabrication of nanogaps with a wide ranging designs and dimensions on different substrates. It is a simple and cost-effective method and does not require complicated nanolithography process for fabricating desired nanogaps in a reproducible fashion.

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Formation of nanometer-scale structures using conventional optical lithography

Cited by 16 publications

References 12 publications

Low-cost photomask fabrication using laser ablation

Low-cost photomask fabrication using laser ablation

Fabrication and Characterization of 50 nm Silicon Nano-Gap Structures

Fabrication of Lateral Polysilicon Gap of Less than 50 nm Using Conventional Lithography

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