Formation of n- and p-type regions in individual Si/SiO<sub>2</sub> core/shell nanowires by ion beam doping

Berencén, Yonder; Prucnal, S.; Möller, W.; Hübner, René; Rebohle, L.; Schönherr, Tommy; Khan, Muhammad Moazzam; Wang, M; Glaser, Markus; Georgiev, Yordan M.; Erbe, Artur; Lugstein, Alois; Helm, M.; Zhou, Shengqiang

doi:10.1088/1361-6528/aadfb6

Cited by 6 publications

(9 citation statements)

References 22 publications

(28 reference statements)

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“…10 Berenceń et al presented the phosphorus and boron doping of individual drop-cast Si/SiO 2 core/sell NWs using ion implantation. 19 In comparison to other doping methods, ion implantation demonstrates several advantages including high efficiency, high reproducibility, and precise control of the concentration and the depth profile of the dopants. In addition, ion implantation can provide a good homogeneity of the dopant depth distribution using one-or multiple-shot implantation depending on the desired depth profile.…”

Section: ■ Introductionmentioning

confidence: 99%

“…In addition, ion implantation can provide a good homogeneity of the dopant depth distribution using one-or multiple-shot implantation depending on the desired depth profile. 7,19,20 However, ion implantation is a destructive method which leads to the amorphization of the lattice structure. Therefore, an annealing process is needed to restore the lattice order and activate the dopant atoms.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Seifner et al reported p-type-doped GeNWs with the homogeneous incorporation of gallium with an estimated carrier concentration of 5 × 10 20 cm –3 . Berencén et al presented the phosphorus and boron doping of individual drop-cast Si/SiO 2 core/sell NWs using ion implantation . In comparison to other doping methods, ion implantation demonstrates several advantages including high efficiency, high reproducibility, and precise control of the concentration and the depth profile of the dopants.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Echresh

Prucnal

et al. 2022

ACS Appl. Electron. Mater.

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Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) with low resistance and linear characteristics remain a major challenge in germanium-based nanoelectronics. Here, we present a combined approach to fabricate Ohmic contacts on n-type-doped GeNWs. Phosphorus (P) implantation, followed by millisecond rear-side flash lamp annealing, was used to produce highly n-type-doped Ge with an electron concentration in the order of 1019–1020 cm–3. Electron beam lithography, inductively coupled plasma reactive ion etching, and nickel (Ni) deposition were used to fabricate GeNW-based devices with a symmetric Hall bar configuration, which allows detailed electrical characterization of the NWs. Afterward, rear-side flash lamp annealing was applied to form Ni germanide at the Ni-GeNW contacts to reduce the Schottky barrier height. The two-probe current–voltage measurements on n-type-doped GeNWs exhibit linear Ohmic behavior. Also, the size-dependent electrical measurements showed that carrier scattering near the NW surfaces and reduction of the effective NW cross-section dominate the charge transport in the GeNWs.

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Section: ■ Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Echresh

Prucnal

et al. 2022

ACS Appl. Electron. Mater.

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“…In most cases, the processing of semiconductors requires the modification of their electronic properties via doping [9], [10]. To do so, ion implanters are routinely used as a way of implanting chemical dopants within them [11], [12]. However, ion beams can induce damage to the target material and even lead to its amorphization [13].…”

Section: Introductionmentioning

confidence: 99%

Anomalous nucleation of crystals within amorphous germanium nanowires during thermal annealing

et al. 2021

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In this work, germanium nanowires rendered fully amorphous via xenon ion irradiation have been annealed within a transmission electron microscope to induce crystallization. During annealing crystallites appeared in some nanowires whilst others remained fully amorphous. Remarkably, even when nucleation occurred, large sections of the nanowires remained amorphous even though the few crystallites embedded in the amorphous phase were formed at a minimum of 200°C above the temperature for epitaxial growth and 100°C above the temperature for random nucleation and growth in bulk germanium. Furthermore, the presence of crystallites was observed to depend on the diameter of the nanowire. Indeed, the formation of crystallites occurred at a higher annealing temperature in thin nanowires compared with thicker ones. Additionally, nanowires with a diameter above 55 nm were made entirely crystalline when the annealing was performed at the temperature normally required for crystallization in germanium (i.e. 500°C). It is proposed that oxygen atoms hinder both the formation and the growth of crystallites. Furthermore, as crystallites must reach a minimum size to survive and grow within the amorphous nanowires, the instability of crystallites may also play a limited role for the thinnest nanowires.

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“…Nevertheless, the volatility of HF acid is extremely harmful. Ion-beam technology is used for surface modification or doping and even isolation, mainly in semiconductors. − It has also been used to fabricate nanostructures. − Compared with other methods, ion-beam technology is more reliable and reproducible to make porous Si. Therefore, we chose ion implantation to prepare nanoporous Si.…”

Section: Introductionmentioning

confidence: 99%

Self-Assembly of Carbon Black/AAO Templates on Nanoporous Si for Broadband Infrared Absorption

Zhang

et al. 2019

ACS Appl. Mater. Interfaces

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Broadband absorption in the mid-infrared region is of significance for wide applications, such as photo/thermal detection, infrared stealth, and thermal imaging. Recently, metal-based plasmonic absorbers have been developed in the mid-infrared region. However, the fabrication cost, thickness, and bandwidth of these absorbers applied in aerospace still need to be improved. In this study, we propose and experimentally demonstrate a large-area, rather thin, metal-free absorber with broadband mid-infrared absorption based on a low-cost self-assembly process. The metal-free absorber is fabricated by spraying carbon black nanoparticles onto 5 μm-thick transferrable anodic aluminum oxide (AAO) templates on nanoporous Si graded-index films, which are fabricated by ion irradiation. Experimental results show that the average absorbance can reach 97.5% in the range of 2.5–15.3 μm. Full-wave numerical simulations show that the electromagnetic fields are greatly enhanced into pores, as these random carbon black particles serve as scatter centers and couple light into 5 μm-thick AAO templates, enhancing the interaction of light with carbon black significantly, and reveal that the high-performance broadband absorption is attributed to the light-trapping effect. The significant light absorption combined with a low-cost, high-production self-assembly technique suggests that the absorber can be used in the fields of optoelectronics and integrated photonics.

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Formation of n- and p-type regions in individual Si/SiO₂ core/shell nanowires by ion beam doping

Cited by 6 publications

References 22 publications

Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Anomalous nucleation of crystals within amorphous germanium nanowires during thermal annealing

Self-Assembly of Carbon Black/AAO Templates on Nanoporous Si for Broadband Infrared Absorption

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Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping

Cited by 6 publications

References 22 publications

Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Anomalous nucleation of crystals within amorphous germanium nanowires during thermal annealing

Self-Assembly of Carbon Black/AAO Templates on Nanoporous Si for Broadband Infrared Absorption

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Formation of n- and p-type regions in individual Si/SiO₂ core/shell nanowires by ion beam doping