Formation of Mg2TiO4 epitaxial thin films on MgO by solid state reaction

Hesse, D.; Bethge, H.

doi:10.1016/0022-0248(81)90392-4

Cited by 32 publications

(11 citation statements)

References 11 publications

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“…The coexistence of these two orienta-tions is reflected by the observation of four peaks, while the (100) plane has only twofold symmetry. This coexistence agrees with a previous report by Hesse & Bethge (1981) in the case of samples grown between 773 and 973 K by electron beam evaporation.…”

Section: Resultssupporting

confidence: 93%

“…The misfit with respect to the substrate is only 0.2%; then the misfit between TiO 2 and MgO or Mg 2 TiO 4 is essentially the same. This result fully confirms the observation of a topotactic growth of Mg 2 TiO 4 on MgO evidenced by Hesse & Bethge (1981) at temperatures above 1073 K, on the basis of transmission electron microscopy.…”

Section: Tio 2 Film Growth On (110)-oriented Cubic Substratessupporting

confidence: 90%

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Substrate-controlled allotropic phases and growth orientation of TiO₂epitaxial thin films

et al. 2010

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TiO 2 thin films were grown by pulsed laser deposition on a wide variety of oxide single-crystal substrates and characterized in detail by four-circle X-ray diffraction. Films grown at 873 K on (100)-oriented SrTiO 3 and LaAlO 3 were (001)-oriented anatase, while on (100) MgO they were (100)-oriented. On (110) SrTiO 3 and MgO, (102) anatase was observed. On M-plane and R-plane sapphire, (001)-and (101)-oriented rutile films were obtained, respectively. On C-plane sapphire, the coexistence of (001) anatase, (112) anatase and (100) rutile was found; increasing the deposition temperature tended to increase the rutile proportion. Similarly, films grown at 973 K on (100) and (110) MgO showed the emergence, besides anatase, of (110) rutile. All these films were epitaxically grown, as shown by ' scans and/or pole figures, and the various observed orientations were explained on the basis of misfit considerations and interface arrangement.

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Section: Resultssupporting

confidence: 93%

Section: Tio 2 Film Growth On (110)-oriented Cubic Substratessupporting

confidence: 90%

Substrate-controlled allotropic phases and growth orientation of TiO₂epitaxial thin films

et al. 2010

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“…While the oxygen sublattice of different islands coalesces without forming any defects, various arrangements of cations in the spinel islands result in the formation of CABs. The fringes are consistent with earlier observations (Nicol and Roy 1970, Hesse and Bethge 1981, Hesse 1987, where, however, the interface structure had not been investigated in detail. According to the cross-section micrograph ( fig.…”

Section: Timg20cmg0supporting

confidence: 92%

Misfit accommodation mechanisms at moving reaction fronts during topotaxial spinel-forming thin-film solid-state reactions: A high-resolution transmission electron microscopy study of five spinels of different misfits

Sieber

Hess

Werner

1997

Philosophical Magazine A

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“…The ARM investigations show that most MgAl,O, grains are tilted around the [OIO], = [I 1 .O], axis by up to about 5" to 6" off orientation (3) in such a direction as to arrange the (400), planes parallel to the (1 ?.4)* planes [21, 341. (Index "S" denotes spinel, index "A" sapphire.) Fig.…”

Section: Films On Sapphire (1 T 2)mentioning

confidence: 99%

TEM Investigations of Spinel‐forming Solid State Reactions: Mechanism, film orientation, and interface structure during MgAl₂O₄ formation on MgO (001) and Al₂O₃ (1 1.2) single crystal substrates

Sieber

Hesse

Senz

et al. 1996

Zeitschrift anorg allge chemie

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The formation of well-oriented MgA1204 spinel films by solid state reactions between (i) a MgO (001) substrate and an A1203 vapour and (ii)a sapphire (17.2) substrate and a deposited solid MgO film, respectively, is experimentally investigated. Composition, structure and morphology of the films are characterized by XRD, SEM, TEMBAED, and EDX. The reaction fronts involved are investigated by cross-sectional atomic resolution transmission electron microscopy (ARM). The direction of the overall diffusion flux and the kind of diffusing species are determined in experiments using inert markers of sub-micron size. There are common features and, however, distinct differences between cases (i) and (ii). On MgO(001) substrates, the MgA1,04 films grow in a simple cube-to-cube orientation: MgA1204(001) I 1 MgO(001); MgA1204[100] II Mg0[100]. The films consist of small grains about 25 to 50 nm in diameter, the orientation of which is sym-metrically distributed around the exact orientation, with maximum deviations of about +2". On sapphire (1 7.2) substrates the MgA1204 films grow almost in the orientation MgAl2O4(001) I/ A120,(l i.2); MgA1204[010] II A1203[11.0]. These films consist of larger grains about 100 nm in diameter, the orientation of which systematically deviates from the above orientation by unidirectional rotations up to 5 to 6" around the substrate [I 1.01 axis. The structures of the reaction fronts show corresponding differences, which are discussed in terms of different mechanisms occurring at the initial stage of the spinelforming reaction because of the different crystallographic conditions at the beginning of the reactions.

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Formation of Mg2TiO4 epitaxial thin films on MgO by solid state reaction

Cited by 32 publications

References 11 publications

Substrate-controlled allotropic phases and growth orientation of TiO₂epitaxial thin films

Substrate-controlled allotropic phases and growth orientation of TiO₂epitaxial thin films

Misfit accommodation mechanisms at moving reaction fronts during topotaxial spinel-forming thin-film solid-state reactions: A high-resolution transmission electron microscopy study of five spinels of different misfits

TEM Investigations of Spinel‐forming Solid State Reactions: Mechanism, film orientation, and interface structure during MgAl₂O₄ formation on MgO (001) and Al₂O₃ (1 1.2) single crystal substrates

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Formation of Mg2TiO4 epitaxial thin films on MgO by solid state reaction

Cited by 32 publications

References 11 publications

Substrate-controlled allotropic phases and growth orientation of TiO2epitaxial thin films

Substrate-controlled allotropic phases and growth orientation of TiO2epitaxial thin films

Misfit accommodation mechanisms at moving reaction fronts during topotaxial spinel-forming thin-film solid-state reactions: A high-resolution transmission electron microscopy study of five spinels of different misfits

TEM Investigations of Spinel‐forming Solid State Reactions: Mechanism, film orientation, and interface structure during MgAl2O4 formation on MgO (001) and Al2O3 (1 1.2) single crystal substrates

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Substrate-controlled allotropic phases and growth orientation of TiO₂epitaxial thin films

Substrate-controlled allotropic phases and growth orientation of TiO₂epitaxial thin films

TEM Investigations of Spinel‐forming Solid State Reactions: Mechanism, film orientation, and interface structure during MgAl₂O₄ formation on MgO (001) and Al₂O₃ (1 1.2) single crystal substrates