Formation of metastable above-barrier hole states in ZnSe/BeTe type II heterostructures under high-density optical excitation

Максимов, А. А.; Зайцев, С. В.; Filatov, E. V.; Larionov, A. V.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.

doi:10.1134/s0021364008200095

Cited by 7 publications

(14 citation statements)

References 8 publications

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“…When bands are bent, the hole state energy in the ZnSe layer is below the edge of the valence band, so a potential barrier is formed and the hole relaxation from the ZnSe layer to the BeTe layer is dramatically retarded. Further band bending leads to the larger barrier depth and to the decrease of the barrier transparency, so the hole state in the ZnSe layer becomes metastable [4,6].…”

Section: Discussionmentioning

confidence: 99%

“…In this work calculations for τ rel and τ rad were performed in the broad range of separated carrier density n (analogous to ones in [3,6]). …”

Section: Discussionmentioning

confidence: 99%

“…Band bending in the ZnSe layer considerably affects relaxation kinetics of photoexcited holes [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…Duration of the direct transition in photoluminescence (PL) allows to determine life-time of holes in the ZnSe layer [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Picosecond kinetics of the electron‐hole layers formation in wide‐bandgap II‐VI type‐II heterostructures

Filatov

Zaı̆tsev

Tartakovskii

et al. 2010

Phys. Status Solidi (c)

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Considerable slowdown of luminescence kinetics of the direct optical transition was discovered in ZnSe/BeTe type‐II heterostructures under high levels of optical pumping. The effect is attributed to forming of a potential barrier for holes in the ZnSe layer due to band bending at high densities of spatially separated carriers. That results in a longer time of the photoexcited holes energy relaxation to their ground state in the BeTe layer. The decrease of overlapping of electron and hole wavefunctions in the ZnSe layer in thick ZnSe/BeTe structures at high levels of optical excitation reveals an additional important effect, that leads to sufficient retardation of radiative recombination time for photoexcited carriers (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Discussionmentioning

confidence: 99%

“…In this work calculations for τ rel and τ rad were performed in the broad range of separated carrier density n (analogous to ones in [3,6]). …”

Section: Discussionmentioning

confidence: 99%

See 2 more Smart Citations

Picosecond kinetics of the electron‐hole layers formation in wide‐bandgap II‐VI type‐II heterostructures

Filatov

Zaı̆tsev

Tartakovskii

et al. 2010

Phys. Status Solidi (c)

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“…Hence, the indirect emission line is attributed to the holes scattered from the Zn 1−x Mn x Se into the Be 1−y Mn y Te layers after the photogeneration. This hole relaxation process is fast and depends strongly on the width of the Zn 1−x Mn x Se layer 16,17 . As a result, the relative intensities of the direct and indirect emission lines in the samples #2 and #3 (pay attention to the multiplication factor for the DT line of the sample #3) differ considerably.…”

Section: Magnetization Dynamics In Type-ii Dms Heterostructuresmentioning

confidence: 99%

Spin diffusion in theMn2+ion system of II-VI diluted magnetic semiconductor heterostructures

et al. 2010

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The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te has been studied experimentally by optical methods and simulated numerically. In the samples with nonhomogeneous magnetic ion distribution this dynamics is contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. The spin diffusion coefficient of 7 · 10 −8 cm 2 /s has been evaluated for Zn0.99Mn0.01Se from comparison of experimental and numerical results. Calculations of the giant Zeeman splitting of the exciton states and the magnetization dynamics in the ordered alloys and parabolic quantum wells fabricated by the digital growth technique show perfect agreement with the experimental data. In both structure types the spin diffusion has an essential contribution to the magnetization dynamics.

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Heating of the Mn spin system by photoexcited holes in type‐II (Zn,Mn)Se/(Be,Mn)Te quantum wells

Debus

Максимов

Dunker

et al. 2014

Physica Status Solidi (b)

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The efficiency of the Mn‐spin system heating under pulsed laser excitation is studied in diluted magnetic semiconductor heterostructures Zn0.99 Mn0.01 Se/Be0.93 Mn0.07 Te with type‐II band alignment by means of time‐resolved photoluminescence and pump‐probe reflectivity. An essential role in the heating is played by multiple spin‐flip scatterings of a hole with localized spins of Mn2+ ions. The efficiency of the spin and energy transfer from photoexcited holes to Mn ions of the Zn0.99 Mn0.01 Se layer considerably depends on the hole lifetime in this layer. This lifetime can be limited by the hole relaxation into the Be0.93 Mn0.07 Te layers and is strongly sensitive to the excitation power and Zn0.99 Mn0.01 Se layer thickness. These dependences allow us to determine a characteristic time of about 20ps for the spin and energy transfer from photoexcited holes to the Mn spin system.

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Formation of metastable above-barrier hole states in ZnSe/BeTe type II heterostructures under high-density optical excitation

Cited by 7 publications

References 8 publications

Picosecond kinetics of the electron‐hole layers formation in wide‐bandgap II‐VI type‐II heterostructures

Picosecond kinetics of the electron‐hole layers formation in wide‐bandgap II‐VI type‐II heterostructures

Spin diffusion in theMn2+ion system of II-VI diluted magnetic semiconductor heterostructures

Heating of the Mn spin system by photoexcited holes in type‐II (Zn,Mn)Se/(Be,Mn)Te quantum wells

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