Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process

Tan, Kang Hai; Jia, Bo; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

doi:10.1016/j.jcrysgro.2015.07.014

Cited by 23 publications

(16 citation statements)

References 27 publications

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“…[1][2][3][4][5][6] Although it could be expected to obtain only the 90 MDs due to their energetically favourable state with respect to the 60 ones, both types are usually observed in this system at similar growth conditions. [7][8][9] The 60 MDs generate threading dislocations (TDs), which emerging from the interface glide to the surface resulting in material degradation, decrementing its electrical and optical properties.…”

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confidence: 99%

“…The temperature chosen is high enough to obtain 2 Â 8 surface reconstruction indicative of the single monolayer of Sb before the GaSb growth, 16 which has been observed to favour IMF formation. 5 Be is expected to act as a surfactant compensating the strain with Sb Ga defects and improving the surface morphology. 17,18 Here, a Be-related hardening mechanism is proposed to attenuate the misfit dislocation glide and interaction and thus the generation of TDs.…”

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confidence: 99%

“…5 Islands are formed to relax the tetragonal distortion due to the very large lattice mismatch (7.8%). These islands are flat-topped, have uniform height, and are bound by {111} planes.…”

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confidence: 99%

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Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

Gutiérrez

Araújo

Jurczak

et al. 2017

Applied Physics Letters

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The need for a low bandgap semiconductor on a GaAs substrate for thermophotovoltaic applications has motivated research on GaSb alloys, in particular, the control of plastic relaxation of its active layer. Although interfacial misfit arrays offer a possibility of growing strain-free GaSb-based devices on GaAs substrates, a high density of threading dislocations is normally observed. Here, we present the effects of the combined influence of Be dopants and low growth temperature on the threading dislocation density observed by Transmission Electron Microscopy. The Be-related hardening mechanism, occurring at island coalescence, is shown to prevent dislocations to glide and hence reduce the threading dislocation density in these structures. The threading density in the doped GaSb layers reaches the values of seven times less than those observed in undoped samples, which confirms the proposed Be-related hardening mechanism.

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Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

Gutiérrez

Araújo

Jurczak

et al. 2017

Applied Physics Letters

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“…Concerning GaAs substrates, similar problems occur if high lattice mismatched layers want to be grown. To relieve the large lattice mismatch between the GaSb-based devices structure and the GaAs (~7.8%) substrate, the material generates itself a highly periodic array of misfit dislocations, called interfacial misfit (IMF) dislocation array 1,2,3,4 at the substrate/heterostructure interface. Although thermodynamically unexpected, 60º misfit dislocations (MDs) are normally observed in addition to the stable edge dislocations.…”

Section: Introductionmentioning

confidence: 99%

“…3.c. is a cross-sectional TEM micrograph taken under 220 bright field conditions of the sample C. It is observed…”

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GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Gutiérrez

Lloret

Jurczak

et al. 2018

Journal of Elec Materi

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The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed to grow strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. While in the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain hardening mechanism avoiding dislocation interactions, in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

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Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Gilbert,

Ramonda,

Patriarche

et al. 2024

Advanced Physics Research

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The monolithic integration of III‐Vs on Silicon (Si) is of great interest for the development of active photonic integrated circuits (PICs). The main challenge is to achieve a high‐quality epitaxy of the III‐V on the Si substrate, as the differences between the materials are responsible for the formation of crystal defects, in particular threading dislocations (TDs) and antiphase domains (APDs) delineated by antiphase boundaries (APBs), which degrade the device's performance. A new technique is demonstrated to achieve thin APBs‐free GaSb buffer layers grown on Si substrates. The original idea presented in this paper is to introduce a GaAs layer into the buffer to promote faster burial of APDs. Two strategies are compared; the first one involves the complete APDs burying in GaAs before growing GaSb, while the second one uses a thin GaAs layer before burying the APDs in the GaSb layer. APB‐free buffer layers as thin as 215/400 nm have been obtained using the first method, which represents a factor of 2/4 thickness reduction compared to the previous results for both 0.5° and 0.2° miscut angles.

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Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process

Cited by 23 publications

References 27 publications

Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

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