Formation of indium-doped zinc oxide thin films using chemical spray techniques: The importance of acetic acid content in the aerosol solution and the substrate temperature for enhancing electrical transport

Castañeda, L.; Garcı́a-Valenzuela, Augusto; Zironi, Elisa; Cañetas-Ortega, J.; Terrones, Mauricio; Maldonado, A.

doi:10.1016/j.tsf.2005.12.263

Cited by 33 publications

(25 citation statements)

References 26 publications

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“…Such a rapid heating and cooling is impossible in a conventional electric furnace. The same preferred orientation is reported for films prepared by spray pyrolysis [8,17] and PLD [18]. Fig.…”

Section: Resultssupporting

confidence: 81%

“…As an oxygen vacancy also acts as a carrier in the film as well, the detail mechanism of the reduction of the carrier density at the indium co ncentrat ion of 11. the indium concentration of 8.6 at.%. Although the resistivity is almost comparable to that prepared by other groups [8,17,18], the film was synthesized rapidly within a few minutes in our study.…”

Section: Resultssupporting

confidence: 70%

“…4 All films were consisted of spherical ZnO particles with the diameter of about 30 nm. The particle size is relatively smaller compared with that prepared by other methods [8,18]. The reason for the small particle size is attributed to a rapid film formation, which is a characteristic feature in a microwave heating.…”

Section: Resultsmentioning

confidence: 88%

“…Metal zinc, on the other hand, is abundant and cheap, so zinc oxide (ZnO) is now attracting much attention as an alternative to ITO. Zinc oxide film was generally prepared by sputtering [5][6][7], pulsed laser deposition (PLD) [8][9] and so on. These methods, however, require a high vacuum system and a complicated film formation process.…”

Section: Introductionmentioning

confidence: 99%

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ZnO thin film prepared by a microwave heating technique

Takahashi

Shinohara

Shiozaki

et al. 2010

Trans. Mat. Res. Soc. Japan

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We investigated a microwave heating technique to prepare transparent conducting ZnO thin films in air within a few minutes. A microwave was directly irradiated to a glass substrate by a commercial kitchen microwave oven with an output power of 2.45GHz and 1000 W. The substrate temperature went up as high as 550°C in a few tens seconds with increasing the thickness of a microwave absorbing layer attached on the back of the substrate. The electrical resistivity of ZnO film reached the minimum value of 4.1×10 -3 Ω•cm by optimizing a dopant indium concentration.

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Section: Resultssupporting

confidence: 81%

Section: Resultssupporting

confidence: 70%

Section: Resultsmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

ZnO thin film prepared by a microwave heating technique

Takahashi

Shinohara

Shiozaki

et al. 2010

Trans. Mat. Res. Soc. Japan

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“…X cm [4][5][6][7][8][9][10][11][12][13][14][15]. In these films, the In-dopant concentration was less than 4 at.%.…”

mentioning

confidence: 90%

Highly transparent and conductive indium-doped zinc oxide films deposited at low substrate temperature by spray pyrolysis from water-based solutions

et al. 2017

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In this paper, indium-doped zinc oxide (IZO) films were grown by spray pyrolysis, using zinc acetate and indium acetylacetonate precursors. The focus was on developing a solution recipe based on water as solvent, with only minor acetic acid content, as well as keeping the substrate temperature as low as possible-at 360°C. The process is therefore environment friendly and energy efficient. Despite the challenging conditions, the resulting IZO films were highly transparent and conductive. Their texture deviates strongly from the (002) texture of ZnO and depends on the indium content, which also influences the resistivity. The latter attains its minimum for an indium concentration of 4 at.% in the solution and decreases for increasing film thickness, reaching the value of (5.0 ± 0.1) 9 10 -3 X cm, mainly due to the increase in carrier mobility. The stability of the resistivity after high dose of UV irradiation was found to increase with the carrier density and the film thickness. Thick, highly doped films show minimal resistivity modification even after a total dose of 12.1 kJ/cm 2 UVA/ UVB irradiation. Finally, to demonstrate its applicability in devices, the IZO electrode was used for the fabrication of a lead-perovskite absorber solar cell, yielding an energy conversion efficiency of 6% and 910 mV open-circuit voltage.

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Electrical properties of chlorine‐doped ZnO thin films grown by MOCVD

Chikoidze¹,

Modreanu

Sallet

et al. 2008

Physica Status Solidi (a)

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Chlorine‐doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall effect measurements show the increase of electron carrier concentration and decrease of electron mobility on increasing the amount of chlorine incorporated in ZnO. Carrier concentrations as high as 6.5 × 1020 cm–3 has been achieved with a resistivity of ρ = 1.4 × 10–3 Ω cm for layers deposited on sapphire substrate. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Formation of indium-doped zinc oxide thin films using chemical spray techniques: The importance of acetic acid content in the aerosol solution and the substrate temperature for enhancing electrical transport

Cited by 33 publications

References 26 publications

ZnO thin film prepared by a microwave heating technique

ZnO thin film prepared by a microwave heating technique

Highly transparent and conductive indium-doped zinc oxide films deposited at low substrate temperature by spray pyrolysis from water-based solutions

Electrical properties of chlorine‐doped ZnO thin films grown by MOCVD

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