Formation of InAs nanocrystals in Si by high-fluence ion implantation

Komarov, F. F.; Власукова, Л. А.; Wesch, W.; Kamarou, A.; Milchanin, O.; Grechnyi, S.; Mudryi, A. V.; Ivaniukovich, A

doi:10.1016/j.nimb.2008.06.010

Cited by 37 publications

(36 citation statements)

References 18 publications

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“…From the analysis of random and aligned spectra one can see the incorporation of impurity atoms into the regular lattice sites during the implantation. These peculiarities of "hot" implantation were observed in our previous experiments on InAs nanocrystals formation, too [4]. In the case of "hot" implantation the incorporation of more than a half of impurity atoms into the regular lattice sites is registered after the annealing.…”

Section: Rbs Datasupporting

confidence: 55%

“…In the case of the implantation at 500 • C the cluster size ranges from about 2 up to 70 nm. A comparison with the results of [4] has shown that the size of nanocrystals implanted at elevated temperature is influenced by the annealing time.…”

Section: Resultsmentioning

confidence: 98%

“…The crystalline nature of the precipitates is proved by the presence of moiré contrast in the TEM images. We have analysed the distance between the moiré bands using the procedure described in [4]. The experimental value of distance between the moiré bands is 1.8 nm (see insert in Fig.…”

Section: Tem Datamentioning

confidence: 99%

“…In our previous paper the InAs nanocrystal formation in Si matrix implanted at 500 • C with 5·10 16 As + /cm 2 and 4.5·10 16 In + /cm 2 and annealed at 900 • C for 45 minutes have been studied [4]. Under the experimental conditions used in [4] the size of the precipitates ranges from 2 to 50 nm. However, most of the clusters had dimensions between 3 and 6 nm.…”

Section: Tem Datamentioning

confidence: 99%

“…The advantage of ion implantation is its compatibility with industrial device production lines. In our previous paper [4] we have reported the formation of InAs nanoclusters in Si matrix by high-fluence ion implantation at the elevated temperature followed with the annealing. Modifying the regimes of implantation and postimplantation annealing may provide a way to control the size and crystalline quality of the compound precipitates thus formed.…”

Section: Introductionmentioning

confidence: 99%

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Effect of implantation and annealing regimes on ion-beam synthesis of InAs nanocrystals

Komarov¹,

Власукова²,

Milchanin³

et al. 2009

Lithuanian J. Phys.

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We reported the formation of nanosized InAs crystallites in silicon wafers by means of As (245 keV, 4.1·10 16 cm −2 ) and In (350 keV, 3.7·10 16 cm −2 ) implantation. The implantation was carried out at 25 and 500• C. In order to verify the effect of getter on precipitates growth an additional procedure was carried out for the samples implanted with As and In species at the room temperature. This procedure included the implantation of H + 2 ions with the energy of 100 keV at 1.2·1016 cm −2 . Afterwards, the samples were annealed at 900• C for 60 min in inert ambient. In order to characterize the implanted layers, Rutherford backscattering spectrometry in combination with the channelling (RBS / C) and transmission electron microscopy (TEM) techniques were used. TEM has revealed InAs nanocrystals in implanted samples after the annealing. It has been shown that average size and size distribution of InAs clusters depend on implantation temperature and annealing duration. Significant diffusional redistribution of implanted species has been revealed after "hot" implantation and post-implantation annealing. We have suggested that it is caused by non-equilibrium diffusion. The radiation-enhanced diffusivities at "hot" implantation have been determined for the abovementioned experimental conditions.

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Section: Rbs Datasupporting

confidence: 55%

Section: Resultsmentioning

confidence: 98%

Section: Tem Datamentioning

confidence: 99%

Section: Tem Datamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Effect of implantation and annealing regimes on ion-beam synthesis of InAs nanocrystals

Komarov¹,

Власукова²,

Milchanin³

et al. 2009

Lithuanian J. Phys.

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Structure and optical properties of silicon layers with GaSb nanocrystals created by ion‐beam synthesis

Komarov

Власукова

Milchanin

et al. 2011

Physica Status Solidi (a)

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Phone: þ375(172)12 48 33, Fax: þ375 (172)78 04 17 We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence implantation of Sb and Ga ions followed by thermal annealing. RBS, TEM/TED, RS, and photoluminescence (PL) were employed to characterize the implanted layers. It was found that the nanocrystals size increases from 5 to 60 nm in the samples annealed at 900 8C up to 20-90 nm in the samples annealed at 1100 8C. An existence of significant mechanical stresses within implanted layers has been detected. The stress values have been calculated from the shift of the Si first order Raman band. For the samples annealed at 900 8C a broad band in the spectral region of about 0.75-1.05 eV is detected in the PL spectra. The nature of this PL band is discussed.

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Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA

Sortica

Canut

Hatori

et al. 2015

Physica Status Solidi (a)

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Si (100) wafers were implanted at 500 °C with 250 keV As ions and 350 keV In ions in this order. The implantations were carried out with three different fluences, namely 1 × 1016, 2 × 1016, and 5 × 1016 cm−2. The samples were annealed with rapid thermal annealing (RTA) for 30 s at temperatures ranging from 800 up to 1000 °C. Different techniques like photoluminescence (PL) and Rutherford backscattering spectrometry (RBS) were employed to characterize the samples. Finally, scanning and transmission electron microscopy (SEM and TEM, respectively) provided further structural information of the InAs nanoclusters. The results indicate that InAs nanoprecipitates are formed after RTA treatment. Moreover, a broad photoluminescence peak was observed in all samples submitted to RTA. RBS results reveal that losses of implanted ions due to diffusion processes can be minimized through the use of RTA, depending of the fluence of ion implantation. Finally, the present results suggest that the photoluminescence yield depends on the degree of the radiation damage induced in the Si matrix during the implantation process.

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Formation of InAs nanocrystals in Si by high-fluence ion implantation

Cited by 37 publications

References 18 publications

Effect of implantation and annealing regimes on ion-beam synthesis of InAs nanocrystals

Effect of implantation and annealing regimes on ion-beam synthesis of InAs nanocrystals

Structure and optical properties of silicon layers with GaSb nanocrystals created by ion‐beam synthesis

Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA

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