Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties

Abstract

AlGaInAs nanowires or rods of 20-40 nm diameter were formed by depositing an AlGaAs/GaAs/InAs short-period superlattice onto selforganized InAs quantum dots on GaAs. The In content is found to be substantially higher in the rods than in the superlattice matrix, implying that rods serve as favorable paths for electrons. Transport properties measured at 4.2 K on a sample where 79-nm-long rods are buried between n þ -GaAs electrodes show that rods are indeed far more conductive than their matrix barrier. Photoluminescence study has indicated that photogenerated carriers recombine mostly in the seed dot portion of rods. #

Simulation and Finite Element Analysis of Electrical Characteristics of Gate-all-Around Junctionless Nanowire Transistors

“…A lot of emphasis has already been laid on analyzing Silicon GAA NWT [1][2][3][4][5][6] and were found to be good replacement for conventional MOSFET in CMOS designs. Later, III-V compound semiconductors such as GaAs, InAs, InSb, GaN [7][8][9][10] were also considered for these applications. GAA architecture allows superior control over the channel current.…”