Formation of In2Se3 thin films and nanostructures using electrochemical atomic layer epitaxy

Vaidyanathan, R.; Stickney, John L.; Cox, S. M.; Compton, Steven P.; Happek, U.

doi:10.1016/s0022-0728(03)00053-6

Cited by 59 publications

(32 citation statements)

References 57 publications

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“…The environment of the deposited atoms is different, and the resistance of the film increases with its thickness. This behavior has already been reported and discussed in many works [15,18,27,34]. Therefore, the control of the deposition process is complex.…”

Section: Electrochemical Behavior Of Sb On Ausupporting

confidence: 57%

“…The crucial point in material electrodeposition is to control the dimensions, the stoichiometric ratio, and the crystallinity of the deposited structures. The electrochemical atomic layer epitaxy (EC-ALE) technique developed by Stickney [13] was proved to be a valid approach to control these parameters for the deposition of chalcogenide compounds on metallic substrates [14][15][16][17][18][19]. This method is based on the alternate underpotential deposition of atomic layers of the elements that form the compound, in a cycle that can be repeated as many times as desired.…”

Section: Introductionmentioning

confidence: 99%

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Underpotential deposition of selenium and antimony on gold

Chen

Wang

Pradel

et al. 2015

J Solid State Electrochem

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International audienceThe present paper is a detailed study on the deposition of Sb2Se3 thin films by electrochemical atomic layer epitaxy (EC-ALE). The related electrochemical aspects have been deeply investigated by means of cyclic voltammetry, anodic potentiodynamic scanning, and coulometry. The UPD layer of Se was obtained by first depositing both UPD Se and a small amount of bulk Se and then stripping the redundant bulk Se in blank solutions. A "two times rinsing" method was developed to avoid the formation of red Se during the rinsing process. The deposition parameters were determined for the first three EC-ALE cycles, and from these values, a nanofilm containing Sb and Se atoms has been obtained. By scanning electron microscopy and coulometry, it was shown that the deposit is compact and it has a stoichiometry very close to that of Sb2Se3. The Raman spectral analyses show that the deposit is made of Sb2Se3 nanoclusters

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Section: Electrochemical Behavior Of Sb On Ausupporting

confidence: 57%

Section: Introductionmentioning

confidence: 99%

Underpotential deposition of selenium and antimony on gold

Chen

Wang

Pradel

et al. 2015

J Solid State Electrochem

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“…167 Indium selenide fi lms were grown from indium sulphate and selenium oxide precursors. 168 The fi lms consisted of large particles, 70 to 200 nm in diameter. The band gap was 1.73 eV.…”

Section: Materials Grown By Ecalementioning

confidence: 99%

“…The band gap was 1.73 eV. 168 Oxidative underpotential deposition (UPD) of As from a HAsO 2 solution and reductive UPD of Ga from a Ga 2 (SO 4 ) 3 solution have been used to deposit GaAs on a gold substrate. 169,170 InAs fi lms grown by ECALE were stoichiometric, and the surface roughness did not increase from the substrate roughness during fi lm deposition.…”

Section: Materials Grown By Ecalementioning

confidence: 99%

Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution‐Phase Deposition Techniques

Lindroos

Leskelä

2008

Solution Processing of Inorganic Materials

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“…The variety of materials includes but is not limited to: magnetic nanowires and superlattices for anisotropic magnetoresistance, AMR, giant magnetoresistance, GMR, and tunnelling magnetoresistance, TMR, memory applications [7,11,32,, polymer nanowires and nanotubes [68,69], semiconductor nanowires [70], rectifiers [37,71,72], single-crystal nanowires [36,[73][74][75][76][77][78][79][80][81][82][83][84][85], superconducting nanowires [86][87][88][89][90], and transistors [91]. Also, there is continued use of track-etched mica [92][93][94].…”

Section: Templatesmentioning

confidence: 99%

Template synthesis of nanomaterials

Wade

Wegrowe

2005

Eur. Phys. J. Appl. Phys.

125

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Abstract. We present an overview of template synthesis as it applies to our nanomaterials research. This bottom-up approach is motivated by our desire to find an alternative to the big, top-down approaches to nanoscience, such as clean-rooms and X-ray lithography. Using universally available templates and materials, and very modest synthesis techniques, we have created a variety of interesting and useful structures. Starting with homogeneous ferromagnetic nanowires, we were able to study and manipulate spin-dependent transport. Next, we branched into multi-layer GMR and spin-valve structures for spintronics. As a side trip, we put carbon-encapsulated fullerene nanoparticles into nanopores for ballistic magnetoresistance studies. Carbon nanotube molecules were grown in templates by CVD self assembly. The carbon nanotubes grown using a cobalt catalyzer show spin-valve, ballistic transport, and Coulomb blockade effects. Very recently, we have started to study templated semiconductor nanorods with the amazing result that their behaviour is very similar to that of the carbon nanotubes and can be reduced to a scaling law. Essentially, the template acts as a skeleton for the nanoscale synthesis and macroscale contact of an infinite variety of materials and structures. It is our hope that by the following examples we demonstrate that high quality nanoscience research is available to everybody. PACS

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Formation of In2Se3 thin films and nanostructures using electrochemical atomic layer epitaxy

Cited by 59 publications

References 57 publications

Underpotential deposition of selenium and antimony on gold

Underpotential deposition of selenium and antimony on gold

Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution‐Phase Deposition Techniques

Template synthesis of nanomaterials

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