Formation of III–V-on-insulator structures on Si by direct wafer bonding

Yokoyama, Masafumi; Iida, Ryo; Ikku, Yuki; Kim, Sang-Hyeon; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi

doi:10.1088/0268-1242/28/9/094009

Cited by 53 publications

(50 citation statements)

References 27 publications

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“…12,16,17 Even though a-Al 2 O 3 thin film are deposited by TMA and H 2 O precursors, the degassing should occur and results in defect generation regardless of the annealing atmosphere. The absence of blisters under nitrogen atmosphere in our experiments, contrary to oxygen-containing atmosphere, proves that there might exist another origin.…”

Section: Resultsmentioning

confidence: 99%

“…A 20 nm thick high-k Al 2 12,13 and proper layer deposition, no bonding defects are observed just after bonding. Scanning Acoustic Microscopy (SAM) analysis was performed to evaluate bonding quality at room temperature or after post bonding annealing.…”

Section: Methodsmentioning

confidence: 97%

“…• C. 12,13 The defect apparition, and resulting debonding, alters its fabrication and its performance. In this paper we focus on these defects within a wide temperature range [RT to 1200…”

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confidence: 99%

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Direct Bonding Mechanism of ALD-Al₂O₃Thin Films

Beche

Fournel

Larrey

et al. 2015

ECS J. Solid State Sci. Technol.

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Direct bonding mechanism of amorphous ALD alumina has been investigated from room temperature up to 1200 • C. By considering the evolution with temperature of free alumina surfaces and bonded configuration we highlight strong interaction between oxidant species and defect generation through interfacial oxidation. In the first case, the combination of internal stress and adhesion loss by dry O 2 oxidation results in blister formations, whereas in the case of bonding structures, wet oxidation with H 2 production at Silicon-Alumina interfaces explains void formation. Based on these established mechanisms we provide insights on alumina layer integration within a large temperature range. © The Author Direct bonding is used to join two mirror-polished wafers without any additional material. This technique has proven to be a powerful assembly strategy and found extensive application in microelectronics, MEMS and optoelectronic device fabrication. In particular, direct bonding has enabled the emergence of Silicon-On-Insulator (SOI) based technologies. For many reasons including processing convenience, good electrical and thermo-mechanical behavior, SiO 2 appeared from the beginning as an ideal candidate as buried insulating material and also for as bonding material. SiO 2 SOI structures promote many advantages such as the improvement of device switching speed and power consumption or even parasitic capacitance. Recently, with device scale reduction, SiO 2 material has shown some limitations such as notable leakage current or self-heating that affects next generation devices. In this context, one possible alternative would be the replacement of SiO 2 by a better candidate.1-3 The consideration of the comprise between thermal and electrical properties has already pointed out different materials such as diamond, Al 2 O 3 , HfO 2 or Si 3 N 4 .1 Among these materials, alumina thin film appears as a credible candidate replacement of buried SiO 2 with suitable electrical (ρ = 10 12 -10 14 .cm) and thermal (thermal conductivity = 0.3-30 W.m −1 .K −1 ) properties. In addition, bonding feasibility was already demonstrated in the past. [4][5][6][7] Recently with the emergence of III-V-OI substrates at low bonding temperature, ALD-Al 2 O 3 thin film found new outlooks. Indeed the improvement of interface quality between III-V substrates and ALD-Al 2 O 3 layers in comparison with SiO 2 layer (lower interface roughness) results in better performance in specific configuration. 8,9 Moreover, direct wafer bonding using the high-k dielectric material provides a better mechanical assembly, much stronger than deposited SiO 2 within the low temperature range.10,11 Nevertheless recent works pointed out numerous defect generations at higher thermal required for other devices and integration scheme typically T ≤ 600• C. 12,13 The defect apparition, and resulting debonding, alters its fabrication and its performance. In this paper we focus on these defects within a wide temperature range [RT to 1200• C]. We conduct a comparative analysis betwee...

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 97%

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Direct Bonding Mechanism of ALD-Al₂O₃Thin Films

Beche

Fournel

Larrey

et al. 2015

ECS J. Solid State Sci. Technol.

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“…High-temperature annealing is commonly used to increase the density of Al-O-Al bonds. However, more H 2 O will be formed at the bonding interface, which may result in micro voids if there is no out-gassing channel for H 2 O [29]. For instance, micro void generation was observed after annealing at 450 • C. A too high annealing temperature may also lead to wafer bowing or cracking because of the large thermal expansion coefficient difference (23%) between Al x Ga 1-x As and sapphire (c-plane) materials.…”

Section: Fabricationmentioning

confidence: 99%

High-Quality-Factor AlGaAs-on-Sapphire Microring Resonators

Zheng

Sahoo

et al. 2019

J. Lightwave Technol.

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“…One of the most prominent applications of wafer bonding is silicon-oninsulator (SOI) (1-5), and it can also be extended to germanium-on-insulator (GOI) (6, 7) or other III-V groups integration (8,9). First direct bonded SOI was reported by Lasky et al.…”

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confidence: 99%

AlN-AlN Wafer Bonding and Its Thermal Characteristics

et al. 2014

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Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face fusion bonding of two clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized during processing. The as-bonded wafer pair is nearly void and particle free with a high bonding strength of 1263.0 mJ/m 2 , enabling it to withstand the subsequent process steps. In addition, the AlN-AlN bonded wafers appear to have the best heat dissipation capability when compared with other bonded wafers, which used SiO 2 or Al 2 O 3 as the bonding layer.Wafer bonding allows heterogeneous integration of two materials that have similar or very different lattice parameters and thermal properties, via an intermediate bonding layer or direct bonding. One of the most prominent applications of wafer bonding is silicon-oninsulator (SOI) (1-5), and it can also be extended to germanium-on-insulator (GOI) (6, 7) or other III-V groups integration (8,9). First direct bonded SOI was reported by Lasky et al. in 1986 (3). Since then, SOI fabricated from wafer bonding has been gaining ground from the conventional Si substrate in ultra-large scale integrations (ULSI) and microelectro-mechanical systems (MEMS) as the starting substrate (10), which benefits from its on-insulator structure. The "on-insulator" advantages make it possible to attain mechanical stability close to Si substrate and excellent electrostatic control, such as attenuated short-channel effects (11), reduced parasitic capacitance and absence of latchup (12). As the most common buried insulator material, SiO 2 has already shown extensive popularity in a couple of optical devices (13-15). However, the low thermal conductivity of SiO 2 (1.46 Wm −1 K −1 ) limits the heat dissipation efficiency and degrades the advantages of SOI. Also, the degraded heat dissipation path deteriorates its heat transfer efficiency to the underlying bulk Si layer, leading to severe self-heating effect. This effect is magnified further by device scaling for performance improvement, which constrains the applicability of SOI in electronics, especially in the cases where high temperature and power dissipation are expected. In order to address this problem, numerous efforts have been dedicated to exploring for novel buried insulator materials with high thermal conductivity. For example, Puurunen et al. had confirmed the possibility to utilize TiO 2 as the buried insulator in the formation of SOI by wafer bonding, whereas an Al 2 O 3 under-layer was required (16). Additionally, SOI formed through Al 2 O 3 -Al 2 O 3 wafer bonding was successfully demonstrated (4). This was 10.1149/06405.0141ecst ©The Electrochemical Society ECS Transactions, 64 (5) 141-148 (2014) 141 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-04-06 to IP

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Formation of III–V-on-insulator structures on Si by direct wafer bonding

Cited by 53 publications

References 27 publications

Direct Bonding Mechanism of ALD-Al₂O₃Thin Films

Direct Bonding Mechanism of ALD-Al₂O₃Thin Films

High-Quality-Factor AlGaAs-on-Sapphire Microring Resonators

AlN-AlN Wafer Bonding and Its Thermal Characteristics

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Formation of III–V-on-insulator structures on Si by direct wafer bonding

Cited by 53 publications

References 27 publications

Direct Bonding Mechanism of ALD-Al2O3Thin Films

Direct Bonding Mechanism of ALD-Al2O3Thin Films

High-Quality-Factor AlGaAs-on-Sapphire Microring Resonators

AlN-AlN Wafer Bonding and Its Thermal Characteristics

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Direct Bonding Mechanism of ALD-Al₂O₃Thin Films

Direct Bonding Mechanism of ALD-Al₂O₃Thin Films