Abstract:Formation of highly-uniform and densely-packed arrays of GaAs dots by selective epitaxy using diethylgallium-chloride and arsine is reported. The arrays of GaAs dots are imaged using atomic force microscopy (AFM). Accounting for the AFM tip radius of curvature, the smallest GaAs dots formed are 15-20 nm in base diameter and 8-10 nm in height with slow-growth crystal planes limiting individual dot growth. Completely selective GaAs growth within dielectric-mask openings at these small size-scales is also demonst… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.