Formation of high resistivity phases of nickel silicide at small area

Tomita, Ryuji; Kimura, Hidehiko; Yasuda, M.; Maeda, Keisuke; Ueno, S.; Tomizawa, Toshihiko; Kunimune, Yorinobu; Nakamura, Hatsuo; Moritoki, M.

doi:10.1016/j.microrel.2012.12.013

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…A trace of oxide-like material was etched off just below the contact hole, which may have led to an increase in resistance. In the P active area, this phenomenon did not occur [32], so the contact resistance comparison was made only through the P active area [33]. The resistance and leakage values in the wafer that was processed after the salicide process had stabilized, were compared again.…”

Section: Resultsmentioning

confidence: 99%

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

et al. 2020

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Here, we developed the optimal conditions in terms of physical and electrical characteristics of the barrier and tungsten (W) deposition process of a contact module, which is the segment connecting the device and the multi-layer metallization (MLM) metal line in the development of 100 nm-class logic devices. To confirm its applicability to the logic contact of barrier and W films, a contact hole was formed, first to check the bottom coverage and the filling status of each film, then to check the electrical resistance and leakage characteristics to analyze the optimal conditions. At an aspect ratio of 3.89:1, ionized metal plasma (IMP) Ti had a bottom coverage of 40.9% and chemical vapor deposition (CVD) titanium nitride (TiN) of 76.2%, confirming that it was possible to apply the process to 100 nm logic contacts. W filling was confirmed, and a salicide etching rate (using Radio Frequency (RF) etch) of 13–18 Å/s at a 3.53:1 aspect ratio was applied. The etching rate on the thermal oxide plate was 9 Å/s. As the RF etch amount increased from 50–100 Å, the P active resistance increased by 0.5–1 Ω. The resistance also increased as the amount of IMP Ti deposition increased to 300 Å. A measurement of the borderless contact junction leakage current indicated that the current in the P + N well increased by more than an order of magnitude when IMP Ti 250 Å or more was deposited. The contact resistance value was 0.5 Ω. An AC bias improved the IMP Ti deposition rate by 10% in bottom coverage, but there was no significant difference in contact resistance. In the case of applying IMP TiN, the overall contact resistance decreased to 2 Ω compared to CVD TiN, but the distribution characteristics were poor. The best results were obtained under the conditions of RF etch 50 Å, IMP Ti 200 Å, and CVD TiN 2 × 50 Å.

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Section: Resultsmentioning

confidence: 99%

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

et al. 2020

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“…En la figura 2.31, se muestran las estructuras cristalinas de las principales fases que se observarán en los materiales procesados en este trabajo, el TiSi 2 de origen y el Ti 5 Si 3 formado por difusión de las partículas de adición hacia el titanio. Se desconoce por qué la estructura metaestable C49 del TiSi 2 se forma con anterioridad a la fase C54, se cree que la justificación pueda ser el hecho de que la estructura de la fase ortorrómbica centrada C49-TiSi 2 tiene una menor energía superficicial que la estructura de la fase ortorrómbica centrada en caras C54-TiSi 2 (Tomita 2013). Los cálculos teóricos indican que la fase C49-TiSi 2 tiene una estructura atómica similar al amorfo TiSi 2 , comparado con la fase C54-TiSi 2 .…”

Section: Disiliciuro De Titaniounclassified

Estudio de la reactividad del titanio con partículas de adición por vía pulvimetalúrgica

Sanchis¹,

Fátima²

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Els estudis realitzats han permès concloure que la via pulvimetal•lúrgica convencional permet l'obtenció de materials compostos i aliatges base titani que ofereixen propietats d'interès industrial. S'ha avaluat la diversa reactivitat oferta pels diferents materials addicionats, i s'ha pogut determinar la influència d'aquesta reactivitat sobre les microestructures i fases metal•lúrgiques formades durant el procés, així com l'impacte i relació d'aquestes formacions microestructurals amb propietats mecàniques i tribològiques dels materials processats.

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