Formation of hidden conductive channels under bombardment of germanium by high-energy protons

Zharkikh, Yu. S.; Lysochenko, S.V.; Lebed, S.; Kukharenko, O.; Tolmachev, N. G.; Третяк, О. В.

doi:10.1134/s106378501310012x

Cited by 2 publications

(5 citation statements)

References 3 publications

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“…However, the ion beam was additionally focused to produce samples shown in Figure 3b. Emerging p-type conductive regions were shaped under the irradiated areas at the depth d i (shaded areas on the inset in Figure 1) [11,12] ; their sizes and arrangement are illustrated in Figure 3.…”

Section: Methodsmentioning

confidence: 99%

“…Conductivity-responsible centers are caused by dangling atomic bonds resulting from Ge crystal lattice rupture. [11,12] Upon small fluence values generated by light ions, simple defects (knocked-on atoms and lattice vacancies) are formed. Implanted ions are located in internodal intervals.…”

Section: Transport Characteristics Of the Implanted Layersmentioning

confidence: 99%

“…[11] In the case of monocrystalline Ge, irradiation by a monoenergetic beam of light ions enables its fundamental modification: formation of p-type electric-conductive areas inside the material (hidden channels, plates, and wires) that is easy to observe experimentally and then compare with the data of other studies. [11,12] To form such layers, one can apply ionic beams similar to those used in the "Smart Cut" technology. [10,13] with necessary energy and fluence.…”

Section: Introductionmentioning

confidence: 99%

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Microwave Absorption in Ge After Bombardment of Helium Ions Beam

Lysochenko,

Kukharenko,

Ilchenko

et al. 2023

Advanced Physics Research

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In this work, the effect of Ge sample bombardment by energy Ei = 1.2 MeV mono‐energetic He+ ions within the fluence range of 1013–1.2 × 1015 cm−2 on the microwave reflection/transmission modification in the frequency range of 26–38 GHz is investigated. It is shown for the first time that such Ge treatment allows achieving a drastic increase in its interaction with microwaves. After the 1 µm thick undersurface area of Ge, accounting for less than 10−3 of its bulk, underwent the fluence of 1.2 × 1015 cm−2, the increase of the microwave absorption coefficient from 0.06 to 0.78 and decrease of the microwave reflection coefficient from 0.7 to 0.18 are observed. This is caused by the occurrence of dangling atomic bonds in nanoscale cavities inside the material. Most probable energy loss mechanisms of microwaves in modified Ge are suggested. Modified semiconductor structures can be used as microwave‐absorbing coverings, devices employing a periodic structure of materials or a gradient of its properties.

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Section: Methodsmentioning

confidence: 99%

Section: Transport Characteristics Of the Implanted Layersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Microwave Absorption in Ge After Bombardment of Helium Ions Beam

Lysochenko,

Kukharenko,

Ilchenko

et al. 2023

Advanced Physics Research

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“…Consequently, the implantation of light ions causes the formation of acceptor-type centers. These centers are associated with defects formed in the course of embedding of protons or -particles [7,10]. The greatest energy losses and formation of stable electrically active defects occur at the end of the stopping distance of particles.…”

Section: Doping Of Samples With Germanium Structure Defectsmentioning

confidence: 99%

“…Such irradiation is used in the Proton Beam Writing (PBW) technology [8] to modify the physical properties of semiconductors [9]. In the present work, beams of protons and -particles are used to create hole conductive channels hidden under the irradiated surface of germanium samples [10]. The dependences of the mobility and concentration of free charge carriers in the channels on the temperature and radiation doses are investigated.…”

Section: Introductionmentioning

confidence: 99%

Hall Study of Conductive Channels Formed in Germanium by Beams of High-Energy Light Ions

et al. 2021

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The implantation of the high-energy ions of H+ or He+ in germanium leads to the creation of buried conductive channels in its bulk with equal concentrations of acceptor centers. These centers are the structure defects of the crystal lattice which arise in the course of deceleration of high-energy particles. This method of introducing electrically active defects is similar to the doping of semiconductors by acceptor-type impurities. It has been established that the density of defects increases with the implantation dose till ≈5×10^15 cm−2. The further increase of the implantation dose does not affect the level of doping. In the range of applied doses (10^12–6×10^16) cm−2, the Hall mobility of holes in the formed conducting channels is practically independent of the implanted dose and is about (2-3)×10^4 cm2/Vs at 77 K. The doping ofthe germanium by high-energy ions of H+ or He+ to obtain conducting regions with high hole mobility can be used in the microelectronics technology.

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Formation of hidden conductive channels under bombardment of germanium by high-energy protons

Cited by 2 publications

References 3 publications

Microwave Absorption in Ge After Bombardment of Helium Ions Beam

Microwave Absorption in Ge After Bombardment of Helium Ions Beam

Hall Study of Conductive Channels Formed in Germanium by Beams of High-Energy Light Ions

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